Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts

Herrmann, Franziska; Beeck, S.; Abstreiter, G.; Hanke, C.; Hoyler, C.; Korte, L.

doi:10.1063/1.104406

Cited by 20 publications

(10 citation statements)

References 7 publications

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“…Extra processes such as InGaP-or ZnSe-epitaxy [42,49] are applied as well. Additional methods for increasing the COD threshold are: -Non-injecting mirrors [14,[50][51][52][53]. This approach relies on the reduction of the current density (and thus carrier concentration) at the front facet.…”

Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…This important finding is in excellent agreement with former results obtained by other authors for QW lasers. 8,10,20 Surface currents are the most likely explaination. 1,2,8,10,20 Diode lasers with a QD active layer offer a variety of advantages compared to conventional devices such as QW lasers.…”

Section: Discussionmentioning

confidence: 99%

Analysis of heat flows and their impact on the reliability of high-power diode lasers

et al. 2003

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Facet overheating is considered a potential source for device degradation of diode lasers. We test two different concepts for the reduction of facet temperatures of high-power diode lasers by measuring the facet temperatures by means of Raman spectroscopy. For conventional high-power broad area lasers we demonstrate the reduction of the facet overheating by the introduction of current blocking layers by a factor of 3-4. For another set of devices among them quantum well and quantum-dot lasers with almost the same device design we find a reduction of the overheating by 40 to 60 percent for the dot devices. Thus we qualify two very different but promising technological approaches for increasing device reliability

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“…One of the convenient method for obtaining the temperature at the laser facet with a relatively high local spatial (1pm) resolution is the micro Raman spectroscopy [1][2][3][4]. Facet heating results from nonradiative' recombination of carriers.…”

Section: Introductionmentioning

confidence: 99%

“…Electrical field (E-100 V/cm) in our experiments was not sufficiently great for initiation so large frequency shifts (AaTO -6 cm1 GaAs-like mode ; AoTO= -3 cm-1 , &oLO= -3cm1 for AlAs-like modes) and for the description of experimental results with traditional theory of selection rules changes in electrical fields (see, for example [10}).For interpretation of our results we used theoretical results of P. Kocevar's work[1 1], where was shown that under sufficiently high electric or photoexcitation of charge carriers in semiconductors noticeable nonequilibrium distributions are to be expected for those phonons, which most strongly couple to the carriers and whose non electronic dissipation rates are slower or comparable to their interaction rates with the carriers. In [1 1] was shown that the fulfilment of the conditions: VcosIl > S (acoustic phonons),(1) Vcosfl > kB® / q (optical phonons),…”

mentioning

confidence: 99%

Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers

Semjonow¹

1998

SPIE Proceedings

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Optical phonon Raman lines (TO-GaAs-like and TO,LO-AIAs-Iike) are shifted to lower energies and are asymmetrically broadened in electrical field compared with that of AlGaAs without field. Simultaneously are increased the intensities of all (optical and acoustical) Raman lines in electrical field. These increasings are different for different "components' of the optical phonons lines. The most significant amplification of intensities (about 3-times) is observed for the lines which correspond to the layers with Al-concentration x=O.3. These experimental results on intensity increasing in electrical field can be describe by phonon Cherencov-effect for optical and acoustical phonons.We discuss also the low frequency tail intensity increasing and stress effects and the nature of the second temperature maximum (not at the centre of the emitter).

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Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts

Cited by 20 publications

References 7 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Analysis of heat flows and their impact on the reliability of high-power diode lasers

Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers

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