2005
DOI: 10.1002/cjoc.200591213
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Reduction of Nitrogen on Gallium Phosphide Nanoparticles

Abstract: Under mild ambient conditions gallium phosphide (GaP) nanoparticles were employed to carry out the reduction of nitrogen. By using Nessler's reagent ammonia was detected in the slurry where the aggregated GaP particles were suspended in water and bubbled by pure nitrogen. Dependence of the concentration of ammonia upon bubbling time, velocity of the flow of nitrogen, and dosage of GaP particles was investigated. In comparison with the original GaP nanoparticles, the Raman scattering of the GaP particles underg… Show more

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Cited by 16 publications
(5 citation statements)
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“…Experimentally and theoretically, the tautomeric equilibrium of heterocyclic compounds has been investigated [11][12][13], and a detailed analysis of the changes in structural, geometric, and energetic parameters caused by the transfer of hydrogen atoms can help us understand the different properties of tautomers. Understanding the relative stabilities of tautomeric forms of heterocycles and how they convert from one form to another is important in the field of structural chemistry.…”
Section: Introductionmentioning
confidence: 99%
“…Experimentally and theoretically, the tautomeric equilibrium of heterocyclic compounds has been investigated [11][12][13], and a detailed analysis of the changes in structural, geometric, and energetic parameters caused by the transfer of hydrogen atoms can help us understand the different properties of tautomers. Understanding the relative stabilities of tautomeric forms of heterocycles and how they convert from one form to another is important in the field of structural chemistry.…”
Section: Introductionmentioning
confidence: 99%
“…The reason for this is due to their potential as useful precursors to semiconductors such as GaAs, InP, and GaP . In particular, owing to its low cost, good optical properties, and good performance, GaP is familiarly found in semiconductor devices such as long-wavelength detectors and semiconductor lasers, light-emitting diodes (LEDs), as well as new applications such as, for instance, a host material for diluted magnetic semiconductors. In fact, as far as the authors are aware, a handful of experimental information on the Ga–P single-bonded and the GaP double-bonded molecules has been reported. Nevertheless, no similar GaP triply bonded compound has been detected so far. This raises our interest to design theoretically the kinetically stable acetylene analogues, RGaPR, because RGaPR is isoelectronic to HCCH from the valence electrons’ viewpoints.…”
Section: Introductionmentioning
confidence: 99%
“…DE orb can be further divided into three different pairwise interaction. The electron sharing bond formation between the ligand fragment and PGa is well described in (DE orb (1) ) and this is the major contribution (67.3% (3); 66.0% (7) Table S13 †) to the total orbital interaction.…”
Section: Energymentioning
confidence: 89%
“…Gallium phosphide (GaP) is widely used in semiconductor containing devices, like long-wavelength detectors and semiconductor lasers, light emitting diodes (LEDs), and as a host material for diluted magnetic semiconductors, because of its low cost, excellent optical properties, and good performance. [1][2][3][4][5][6][7][8][9][10] Due to its extensive use in electroluminescent devices, gallium phosphide (GaP), having an indirect band gap with a zinc blende (ZnS) structure (wurtzite/w-BN), is one of the very important group III-V semiconductors with the highest industrial importance, and used in MOCVD (MOCVD = metal organic chemical vapour deposition) processes. [11][12][13][14] By virtue of the 2.26 eV band gap, GaP emits at 555 nm, which makes it not just a semiconducting material, but also a green light emitting LED.…”
Section: Introductionmentioning
confidence: 99%