Reduction of off-state leakage current on fully depleted DG-MOSFETs

Abstract

This paper will discuss the analysis and reduction of off-state leakage current on DG MOSFETs. We examine the influence of channel length (Lg) and channel thickness (Tsi) on device performance of nanoscale Double Gate (DG) MOSFETs, employing Non-equilibrium Green's function (NEGF) formalism. When the channel length is shrinks down, the electrostatic controllability of the gate over the channel decreases due to the increased charge sharing from source/drain. The present work provides design insights into the performance of nanoscale DG-MOSFET devices with optimal channel engineering and serves as a tool to optimize important device and technological parameters for 10−24 nm range.