Reduction of oxygen contamination in AlN

Salzman, J.; Prawer, S.; Meyler, B.; Golan, Yuval; Shandalov, Michael; Sauer, R.; Teofilov, N.

doi:10.1002/pssc.200303387

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Use of Si (111) further helped to minimize oxygen diffusion from the substrate, which occurs regularly when sapphire is used as the substrate. 5,13 The growth temperature was ;1100°C. The thickness of the resulting AlN films was ;0.5 mm.…”

Section: Methodsmentioning

confidence: 99%

“…[1][2][3][4] Challenges in crystal growth due to the high-temperature growth requirement, 5,6 dopant incorporation problems, 7 and availability of suitable substrates for latticematching have limited the number of studies of AlN films. 8,9 In this study, we have performed a detailed spatially and spectrally resolved cathodoluminescence (CL) study for high-quality thin AlN films grown on Si(111), which could serve as a practical and convenient substrate for future synthesis and processing of AlGaN-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Sarusi

Moshe

Khatsevich

et al. 2006

Journal of Elec Materi

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Spatially, spectrally, and depth-resolved cathodoluminescence (CL) measurements were performed for high-quality thin AlN films grown on Si(111). CL spectra exhibited a sharp peak at 5.960 eV, corresponding to the near-band-edge excitonic emission of AlN. Depth-resolved CL analysis showed that deep level oxygen and carbon impurities are localized primarily at the AlN/Si interface and AlN outer surface. Monochromatic CL imaging of the near-band-edge emission exhibits a spotty pattern, which corresponds to high concentrations of threading dislocations and thermally induced microcracks in the thin layers. We have examined relief of the thermal stress in close proximity to single microcracks and intersecting microcracks. Local CL spectra acquired with a focused e-beam show blue-shifts as large as ;82 meV in the AlN nearband edge excitonic peaks, reflecting defect-induced reductions in the biaxial thermal stress, which has a maximum value of ;47 kbar.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Sarusi

Moshe

Khatsevich

et al. 2006

Journal of Elec Materi

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Optical Centers in Cr-, Mn-, and O-Doped AlN and Their Thermodynamic Stability Designed by a Multiscale Computational Approach

Mansoor,

Sarsil,

Mansoor

et al. 2024

ACS Appl. Mater. Interfaces

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The optical centers in AlN can frequently exist in various charge states and can be accompanied by many coexisting defect species, creating a complex environment where mutual interactions are inevitable. Therefore, it is an immediate quest to design AlN crystal growth protocols that can target a specific optical center of interest and tune its concentration while preventing the formation of other unwanted point defects. Here, we provide a powerful workflow for point defect engineering in wide band gap, binary semiconductors that can be readily used to design optimal crystal growth protocols through combining CALPHAD-based phase analysis, and ab initio defect calculations. We investigate technologically relevant chromium-and manganeseinduced optical centers in AlN, followed by studying the impact of oxygen that can be unintentionally incorporated during crystal growth. We present the dominant defects in all three cases as a function of process parameters along with the optical signatures. In the case of both Cr and Mn doping, the Cr Al and Mn Al defects are most likely, and increasing nitrogen partial pressure tends to enhance their concentration. We show that it is possible to use nitrogen fugacity as a tool for tuning the intensity of optical signatures. We calculate the Cr Al charge transition levels with respect to the valence-band maximum at 2.60 eV (E +/− ), 3.83 eV (E 0/− ), and 5.41 eV (E −/2− ) and electron and hole capture transitions with luminescence bands centered at 2.82, 1.91, and 3.15 eV. Unlike the Cr doping, Mn aggregation is unlikely, and the Mn Al −V N is the most abundant defect after Mn Al under most synthesis conditions. Oxygen tends to form complexes with V Al , and O N −V Al is a prominent defect following O N , with near-UV emission bands at 3.17, 3.26, and 3.81 eV. Our results agree with the available experimental optical signatures of Cr-, Mn-, and O-related centers and provide pathways on how to tune the luminous intensity of these centers through changes in growth conditions.

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Reduction of oxygen contamination in AlN

Cited by 2 publications

References 6 publications

Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Optical Centers in Cr-, Mn-, and O-Doped AlN and Their Thermodynamic Stability Designed by a Multiscale Computational Approach

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