Reduction of shunt current in buffer-free IrMn based spin-valve structures

Kocaman, Bayram; Akdoğan, N.

doi:10.1016/j.jmmm.2018.02.008

Cited by 13 publications

(3 citation statements)

References 50 publications

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“…The crystalline orientation plays a dominant role in the high exchange bias field (H EB ) and PMA [34]. In particular, these orientations of IrMn and Pt layers are known to strongly promote H EB and PMA in IrMn/Co and Pt/Co interfaces, respectively [35,36].…”

Section: Resultsmentioning

confidence: 99%

Tailoring magnetic properties by tuning the interface in a Pt/Co/Pt/IrMn system with perpendicular and double-exchange biases

Kocaman¹

2022

J. Phys. D: Appl. Phys.

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We prepared Pt/Co/Pt(tPt)/IrMn heterostructures with perpendicular exchange bias by inserting a Pt spacer between Co and IrMn. X-ray diffraction (XRD) demonstrates that the IrMn and Pt layers exhibit a (111) texture promoting perpendicular exchange bias. Here, the samples for various Pt spacer thicknesses exhibit double-shifted hysteresis loops with the coexistence of positive and negative exchange biases. Magnetic force microscopy (MFM) measurement indicates that this behavior in the as-grown state results from the formation of an antiferromagnetic bidomain state with opposite signs. Also, the magnetic loop behaviors can be tailored by tuning the exchange bias, coercive and switching fields which are sensitive to sub-nanometer changes in the spacer layer (Pt) thickness. It is found that the optimum thickness of the Pt layer is 0.8 nm by considering a well-defined single remanence state, where HEB is about seven times as large as the coercivity. Our results indicate that large exchange bias and rather small coercivity necessary for the single-remanence state in the double-shifted Pt/Co/Pt/IrMn systems can be achieved by tuning the interface at atomic level. Moreover, magnetic properties were analyzed in detail depending on Pt space spacer layer thickness between Co and IrMn layers. These results may be useful for potential applications in future multilevel memory devices.

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Section: Resultsmentioning

confidence: 99%

Tailoring magnetic properties by tuning the interface in a Pt/Co/Pt/IrMn system with perpendicular and double-exchange biases

Kocaman¹

2022

J. Phys. D: Appl. Phys.

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“…As a result, magnetic layers lose the ability to focus magnetization and the structure ceases to function as a spin-valve [8,[10][11][12]. The solution to this problem may be the use of additional thin buffer layers between the working layers [13,14]. Also, reliable separation of the Co or NiFeCuMo layer can be achieved through the use of Ru layers with an effective thickness of 0.2 to 3 nm [15,16].…”

Section: Introductionmentioning

confidence: 99%

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Lohvynov

Cheshko

Pazukha

et al. 2022

Phys. Chem. Solid St.

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In this paper, the investigation of the crystal structure and electrophysical properties of Co/Ru/Co/Sub three-layer film systems with a Ru layer thickness dRu = 5-20 nm has been carried out. It is shown that for both as-deposited and annealed at 800 K thin-film samples the phase composition corresponds to hcp-Co + hcp-Ru. The dependence of resistivity and temperature coefficient of resistance as a function of dRu was received. It was demonstrated that the change in the resistivity value during the first cycle of heat treatment stays more significant than more Ru layer thickness. The value of temperature coefficient of resistance has an order of 10-4 and growth from 5.05×10-4 to 6.42×10-4 K-1 within the dRu range 0-20 nm.

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“…The addition of a conductive nonmagnetic capping layer will result in the reduction of the PHE output voltage only, by changing the shunt current. The addition of seed layer affects several parameters at once: exchange bias (by varying the structure of the FM layer [26,27]), magnetoresistance [28,29], and shunt current [30]. The thickness variation of nonmagn etic spacer within 0.1 nm-1.2 nm results in partial decoupling between FM and AFM layers, and, therefore, allows tuning of the exchange bias.…”

Section: Introductionmentioning

confidence: 99%

Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers

Elzwawy

SungJoon

Таланцев

et al. 2019

J. Phys. D: Appl. Phys.

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A novel technique of operating field range adjustment using varying thicknesses of spacer and capping layers is proposed for planar Hall effect (PHE) magnetic sensors. In terms of this technique, the spacer and capping layer thicknesses are varied interdependently, in a way that the variation of the operating magnetic field range is performed without a change of sensitivity. The relationship between the thicknesses of spacer and capping layers required for this 'equisensitive' variation of field range are calculated and experimentally approved. The active layer material substitution effect on the performance of PHE sensor is studied. The sensitivity, output voltage, operating field range, and shunt current are compared for PHE sensors, based on NiFe and NiFeMo active ferromagnetic layers. The NiFe/IrMn and NiFeMo/ IrMn interface coupling energies are compared and the effect of IrMn crystallinity on their difference is discussed. The range of active layer thicknesses, at which the operating field range can be varied while maintaining the sensitivity at the same value, has been determined.

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Reduction of shunt current in buffer-free IrMn based spin-valve structures

Cited by 13 publications

References 50 publications

Tailoring magnetic properties by tuning the interface in a Pt/Co/Pt/IrMn system with perpendicular and double-exchange biases

Tailoring magnetic properties by tuning the interface in a Pt/Co/Pt/IrMn system with perpendicular and double-exchange biases

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers

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