Reduction of the radiation sensitivity of MOS structures by irradiation-anneal cycle treatment

Kaschieva, S.

doi:10.1016/0168-583x(93)95970-g

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“…Some authors have demonstrated experimentally that thermal treatment of MOS structures at 400 • C for 30 min anneals the radiation defects generated during irradiation [18][19][20]. Even though these and other reports [21][22][23] provided some insight on the radiation hardness, a systematic evaluation of the device performance of the MOSbased radiation sensors during their successive usage/recovery cycle as a result of irradiation-annealing process has not been reported in detail.…”

Section: Introductionmentioning

confidence: 97%