2022
DOI: 10.3390/s22218258
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Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Abstract: Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic impurities. A complementary metal-oxide-semiconductor (CMOS) image sensor fabricated with this novel epitaxial silicon wafer has a markedly reduced number of white spot defects, as determined by dark current spectros… Show more

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“…The succeeding main function was minimizing to a finetune the network to softmax state in Eq. ( 14) [16,17]. where, W and b refers the weight and bias of entire deep network, 𝐽(𝑥, 𝑧) represents the LR cost amongst the classifier attained with input feature x and unsupervised outcome 𝑧̂ and W smc implies the weight and λ smc stands for the weight decomposed parameter [18,19].…”
Section: Softmax Classifiermentioning
confidence: 99%
“…The succeeding main function was minimizing to a finetune the network to softmax state in Eq. ( 14) [16,17]. where, W and b refers the weight and bias of entire deep network, 𝐽(𝑥, 𝑧) represents the LR cost amongst the classifier attained with input feature x and unsupervised outcome 𝑧̂ and W smc implies the weight and λ smc stands for the weight decomposed parameter [18,19].…”
Section: Softmax Classifiermentioning
confidence: 99%