Reentrant metal–insulator-type transition induced by high fluence chromium ion implantation of La0.7Ca0.3MnO3 thin films

Abstract

Enhancement of the metal-insulator transition temperature in La0.7Ca0.3MnO3 film by magnetic nanodots Appl. Phys. Lett. 102, 072402 (2013); 10.1063/1.4792762 Phase evolution and the multiple metal-insulator transitions in epitaxially shear-strained La 0.67 Ca 0.33 MnO 3 / NdGaO 3 ( 001 ) films J. Appl. Phys. 108, 083912 (2010); 10.1063/1.3499650 Room temperature magneto-resistance and temperature coefficient of resistance in La 0.7 Ca 0.3 − x Ag x Mn O 3 thin films Influence of the substrate on growth and magnetoresistance of La 0.7 Ca 0.3 MnO z thin films deposited by magnetron sputtering

Field-induced insulator—metal—insulator transitions in low-energy H+2ion-irradiated epitaxial La2/3Ca1/3MnO3thin films

“…An energy landscape with the undistorted state the local minimum and the distorted state the global minimum has been proposed. [1] Apparently, weak external perturbations like the field, pressure, and exposure to photons such as visible light, [2] lasers, [3,4] X-rays, [5] focused electrons, [6] and even accelerated ions [7][8][9][10][11][12][13][14][15][16] can all modify the landscape, and thus induce transitions to some metastable states, giving rise to extraordinary magnetic and electric properties.…”

“…Ion irradiation or implantation can introduce a controlled degree of defects. Several kinds of ions such as Ar, [7] Cr, [8] O, [9,13] Fe, [11] Ag, [10,12,14,15] and Ga [16] of energies 100 keV-200 MeV and doses 10 11 ions/cm 2 -10 16 ions/cm 2 have been adopted to irradiate manganites. The irradiations generally cause a shift in the insulator-metal (I-M) transition to lower temperatures, a decrease in the conductivity and an enhance-ment of the low-temperature magnetoresistance (MR), with only an exception in La 0.5 Pr 0.2 Ba 0.3 MnO 3 .…”