YbF3‐doped BaF2 crystals with various concentrations of YbF3 (0.05, 0.1, 0.17, 0.2 mol%) have been grown using the conventional Bridgman method. Dielectric relaxation is used to study the charge compensating defects in BaF2 crystals with low YbF3 concentration. The optical absorption spectra reveal the existence of both Yb2+ (in UV domain) and Yb3+ (in IR domain) ions. In the investigated temperature range (150–320 K) we have observed only one type of dielectric relaxation. This relaxation with activation energy E=0.54 eV is associated with trigonal‐type (C3v) centers. The charge compensating defects are discussed while taking also into account the optical absorption spectra and the calculated number of NNN dipoles whose relaxation is observed.