Refinement of the Sb2Te3 and Sb2Te2Se structures and their relationship to nonstoichiometric Sb2Te3−y
 Se
 y
 compounds

Anderson, Tyler; Krause, H. Brigitte

doi:10.1107/s0567740874004729

Cited by 299 publications

(172 citation statements)

References 7 publications

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“…The lattice parameters were determined to be a = 4.284Å, c = 29.669Å. The observed values are good agreement with those reported previously 17,27 .…”

Section: 26supporting

confidence: 79%

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

et al. 2014

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Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We synthesized very high quality Bi2Te2Se single crystals by modified Bridgman method, that possess high bulk resistivity of >20 Ωcm below 20 K, whereas the bulk is mostly inactive and surface transport dominates. Temperature dependence resistivity follows the activation law like a gap semiconductor in temperature range 20-300 K. We designed a special measurement geometry, which aims to extract the surface transport from the bulk. This special geometry is applied to measure the resistance and found that Bi2Te2Se single crystal exhibits a cross over from bulk to surface conduction at 20 K. Simultaneously, the material also shows strong evidence of weak anti-localization in magneto-transport due to the protection against scattering by conducting surface states. This novel simple geometry is an easy route to find the evidence of surface transport in topological insulators, which are the promising materials for future spintronic applications.Topological insulators (TIs) have recently attracted significant attention since they are materialized into a new state of quantum matters, and they possess topologically protected metallic states on their edges or surfaces.1,2 These conducting SSs originate from the inversion of bulk bands due to the results of strong-spin-orbital coupling. Therefore, these novel metallic states are a subject of intensive investigations because of not only its fundamental novelty but also its high potential applications for spintronics devices 3 and quantum computations. 4In 3D TIs, the topological surface states have been successfully investigated by surface-sensitive techniques as angle-resolved photoemission spectroscopy 5,6 and scanning tunneling microscopy 7,8 . However, the evidences of transport through the surface sates remain a challenge due to the presence of the parallel bulk conducting channels that usually dominate the transport properties. 9-11Various strategies to improve surface conductivity, e.g., studying thin films or nano-flacks 6,12-16 , gating 15,17,18 , and doping 10,11,19 have been employed. Among the all known TIs, the ternary tetradymite Bi 2 Te 2 Se (BTS) has largely been investigated material that gives excellent performance of surface in temperature dependence resistivity 6,[12][13][14][15][16]20 . It shows large bulk resistivity due to the nearly perfect crystalline structure, and it has been predicted nearly perfect Dirac cones in terms of less entanglement of bulk and surface states 6,16,19,20 . The quantum oscillations have also been observed in BTS 20-22 and doped BTS 10,19 bulk samples, and they show surfaceddominated transport contributes up to 70% of the total conductance 10,20 . Besides showing this metallic behavior, excellent performance of the surface states of TIs appears in magneto-conductance in effect of weak antiloca...

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“…The lattice parameters were determined to be a = 4.284Å, c = 29.669Å. The observed values are good agreement with those reported previously 17,27 .…”

Section: 26supporting

confidence: 79%

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

et al. 2014

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“…The Sb 2 Te 3 unit cell is shown in Figure 11, which possesses a layered hexagonal structure with space group R3m [112]. The Sb 2 Te 3 layers are held together by dispersion interactions in the c direction and the Sb III cations are fully coordinated in a distorted octahedral geometry to Te anions in two different environments.…”

Section: Sb 2 Tementioning

confidence: 99%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications, Journal of Solid State Chemistry, http: //dx.doi.org/10. 1016/j.jssc.2014.02.014 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/jsscThe electronic structure of the antimony chalcogenide series:Prospects for optoelectronic applications

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“…The preferred orientation was refined by the March-Dollase multiaxial function 29 with the assumption that the preferred orientation planes were the (1 1 0), (0 1 5), and (0 0 1 5). The 23,24 A temperature-dependent diffraction study on Bi 2 Te 3 and Sb 2 Te 3 was carried out for comparison and the refined lattice parameters are given in Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B

121

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The lattice dynamics in Bi 2 Te 3 and Sb 2 Te 3 were investigated both microscopically and macroscopically using 121 Sb and 125 Te nuclear inelastic scattering, x-ray diffraction, and heat capacity measurements. In combination with earlier inelastic neutron scattering data, the element-specific density of phonon states was obtained for both compounds and phonon polarization analysis was carried out for Bi 2 Te 3 . A prominent peak in the Te specific density of phonon states at 13 meV, that involves mainly in-plane vibrations, is mostly unaffected upon substitution of Sb with Bi revealing vibrations with essentially Te character. A significant softening is observed for the density of vibrational states of Bi with respect to Sb, consistently with the mass homology relation in the long-wavelength limit. In order to explain the energy mismatch in the optical phonon region, a ∼20% force constant softening of the Sb-Te bond with respect to the Bi-Te bond is required. The reduced average speed of sound at 20 K in Bi 2 Te 3 , 1.75(1) km/s, compared to Sb 2 Te 3 , 1.85(4) km/s, is not only related to the larger mass density but also to a larger Debye level. The observed low lattice thermal conductivity at 295 K, 2.4 Wm −1 K −1 for Sb 2 Te 3 and 1.6 Wm −1 K −1 for Bi 2 Te 3 , cannot be explained by anharmonicity alone given the rather modest Grüneisen parameters, 1.7(1) for Sb 2 Te 3 and 1.5(1) for Bi 2 Te 3 , without accounting for the reduced speed of sound and more importantly the low acoustic cutoff energy.

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Refinement of the Sb₂Te₃ and Sb₂Te₂Se structures and their relationship to nonstoichiometric Sb₂Te_3−ySe_y compounds

Cited by 299 publications

References 7 publications

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B

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Refinement of the Sb2Te3 and Sb2Te2Se structures and their relationship to nonstoichiometric Sb2Te3−y Se y compounds

Cited by 299 publications

References 7 publications

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

Evidence of surface transport and weak antilocalization in a single crystal of theBi2Te2Setopological insulator

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Lattice dynamics in Bi2Te3and Sb2TeBessas1, Sergueev2, Wille3 et al. 2012Phys. Rev. B

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Refinement of the Sb₂Te₃ and Sb₂Te₂Se structures and their relationship to nonstoichiometric Sb₂Te_3−ySe_y compounds

Lattice dynamics in Bi2Te3and Sb2Te
Bessas
¹
,
Sergueev
²
,
Wille
³

et al. 2012
Phys. Rev. B