Reflectance‐anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

Abstract

Reflectance‐Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In0.3Ga0.7As on GaAs (001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As4 or As2 flux pressure of 5× 10–6 Torr. Clear RA‐oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga‐As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys

“…Reflectance Anisotropy Spectroscopy (RAS), a differential optical technique successfully applied to MBE and MOVPE growth of III-V compounds, could offer this opportunity [12]. In its pristine application, the exceptional sensitivity of RAS to optical anisotropy signals has been exploited to investigate the layerby-layer deposition during the growth, for example, of GaAs(001) [13], GaP(001) [14], InGaAs(001) [15], as well as to characterize clean surfaces of semiconductors [16][17][18], metals [19], insulating materials [20] and This is the author's peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.…”