Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring

Lastras‐Martínez, A.; Ortega‐Gallegos, J.; Guevara-Macías, L. E.; Núñez-Olvera, O.; Balderas‐Navarro, R. E.; Lastras-Martı́nez, L. F.; Lastras-Montaño, L.A.; Lastras-Montaño, Miguel Angel

doi:10.1016/j.jcrysgro.2015.02.061

Cited by 3 publications

(3 citation statements)

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“…On the basis of the results reported elsewhere [16,17], we know that the RA spectra of figure 2(a) comprise two components with specific physical origins. A first component, which approximately corresponds to the uppermost spectrum in figure 2(a), is associated with the anisotropic strain induced by surface reconstruction and has a resonant line shape tied to E 1 and + ∆ E 1 1 inter band transitions.…”

Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 73%

“…Horizontal lines correspond to the value ∆ = R R / 0 of each spectrum. Gray lines correspond to SVD adjustments in terms of the two basic line shape components S 1 (E ) and S 2 (E ) [17]. The inset shows the RHEED oscillations as a function of time, recorded simultaneously with the RA spectra; vertical dotted lines correspond to the times t = 0 and t = 1.9 s.…”

Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 99%

“…Figure 3 shows the time evolution of the normalized amplitude of component S 1 (E ) of the spectra shown in figure 2. S 1 (E ) and S 2 (E ) line shapes were determined on the basis of a Singular Value Decomposition (SVD) [17] analysis of the experimental, time-dependent RA spectra, following the procedure reported previously [18]. Such line shapes are shown in the inset of figure 3.…”

Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 99%

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A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring

Ariza-Flores

Ortega‐Gallegos

Núñez-Olvera

et al. 2015

Meas. Sci. Technol.

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We report on a reflectance anisotropy (RA) spectrometer capable of measuring reflectance spectra on the 100 ms time-scale and sensitivity in the upper 10 −4 range. A multichannel lock-in amplifier was used to acquire 32 wavelengths RA spectra covering the 2.25-3.85 eV photon energy range, where the E 1 and + ∆ E 1 1 transitions of GaAs and other technologically relevant III-V semiconductor are located. The RA spectra recorded during the first stages of the GaAs homoepitaxial deposition are presented for the first 0.38 monolayers of growth, showing significative changes in the lineshape with low noise. Thanks to the capabilities of this instrument, it is possible to observe in detail, in terms of the evolution of RA spectra, the processes carried out during the migration of surface reconstruction between two stable phases present in the homoepitaxial growth of GaAs.

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Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 73%

Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 99%

Section: Figure 2(a) Shows a Selection Of Real-time ∆R Rmentioning

confidence: 99%

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