Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Lv, Pin; Cao, G. F.; Wen, L.; Kharusi, S. Al; Anton, Gisela; Arnquist, I. J.; Badhrees, I.; Barbeau, P. S.; Beck, D.; Belov, V.; Bhatta, Trilochan; Breur, P. A.; Brodsky, J.; Brown, E.; Brunner, T.; Mamahit, S. Byrne; Caden, E.; Cao, Liqiang; Chambers, Claire; Chana, B.; Charlebois, Serge A.; Chiu, M.; Cleveland, B. T.; Coon, Minor J.; Craycraft, A.; Dalmasson, J.; Daniels, T.; Darroch, L.; Croix, A. De St.; Mesrobian-Kabakian, A. Der; Deslandes, K.; DeVoe, R.; Vacri, M. L. Di; Dilling, J.; Ding, Yayun; Dolinski, M. J.; Doria, L.; Dragone, A.; Echevers, J.; Edaltafar, F.; Elbeltagi, M.; Fabris, L.; Fairbank, D.; Fairbank, W. M.; Farine, J.; Ferrara, Silvia; Feyzbakhsh, S.; Fucarino, A.; Gallina, G.; Gautam, P.; Giacomini, G.; Goeldi, D.; Gornea, R.; Gratta, G.; Hansen, E. V.; Heffner, M.; Hoppe, E. W.; Höβl, J.; House, A.; Hughes, M.; Iverson, A.; Jamil, A.; Jewell, M. J.; Jiang, X. S.; Karelin, A.; Kaufman, L. J.; Koffas, T.; Krücken, R.; Kuchenkov, A.; Kumar, Krishna; Lan, Y.; Larson, A. C.; Leach, K. G.; Lenardo, B. G.; Leonard, D. S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; MacLellan, R.; Massacret, N.; McElroy, Thomas; Medina-Peregrina, M.; Michel, Thilo; Mong, B.; Moore, David C.; Murray, K.; Nakarmi, P.; Natzke, C. R.; Newby, Robert Jason; Ning, Z.; Njoya, O.; Nolet, F.; Nusair, O.; Odgers, K.; Odian, A.; Oriunno, M.; Orrell, J. L.; Ortega, G. S.; Ostrovskiy, I.; Overman, C.T.; Parent, Samuel; Piepke, A.; Pocar, A.; Pratte, J.‐F.; Radeka, V.; Raguzin, Е.; Rescia, S.; Retière, F.; Richman, M.; Robinson, A.; Rossignol, T.; Rowson, P. C.; Roy, N.; Runge, J.; Saldanha, R.; Sangiorgio, S.; Skarpaas, K.; Soma, A. K.; St-Hilaire, G.; Stekhanov, V.; Stiegler, T.; Sun, XL; Tarka, M.; Todd, J.; Totev, T. I.; Tsang, R.; Tsang, T.; Vachon, F.; Veeraraghavan, V.; Viel, S.; Visser, G.; Vivo-Vilches, Carlos; Vuilleumier, J. L.; Wagenpfeil, M.; Wager, T.; Walent, M.; Wang, Q.; Watkins, J.; Wei, W.; Wichoski, U.; Wu, Sen; Wu, Wei; Wu, Xiaoli; Xia, Qi; Hong-jun, Yang; Yang, L.; Zeldovich, O.; Zhao, J.; Zhou, Y.; Ziegler, T.

doi:10.1109/tns.2020.3035172

Cited by 17 publications

(37 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the Rayleigh scattering length ≈ 30 − 50 cm is much smaller than the linear dimensions of the detector, the light propagation is diffusive and photons transit a substantially larger linear distance than the detector size during propagation. Nonetheless, these simulations indicate that an absorption length of 80 m ( 40 m) for designs 1 (2) is sufficient to reach the desired total > 10% collection efficiency when combined with measured SiPM photon detection efficiencies [121,122] and reflectivities [125][126][127]. These absorption lengths are comparable to the lower limits extrapolated from existing measurements [107,128,129], and are expected to improve with Xe purity.…”

Section: Liquid Phasesupporting

confidence: 57%

Kiloton-scale xenon detectors for neutrinoless double beta decay and other new physics searches

Avasthi,

Bowyer,

Bray

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

Section: Liquid Phasesupporting

confidence: 57%

Kiloton-scale xenon detectors for neutrinoless double beta decay and other new physics searches

Avasthi,

Bowyer,

Bray

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

“…FBK provided samples from their VUV-HD LF model fabricated in 2016 and a bare silicon wafer sample covered with a 1.5 µm thick film of SiO 2 . The sample examined in [20] is from the same silicon wafer as the one used in this work. The Large-Area Avalanche Photodiode (LA-APD) is a mechanically and optically intact spare part from the EXO-200 detector [8].…”

Section: Reflection Samplesmentioning

confidence: 99%

“…For some photosensor candidates, the VUV-reflectivity has been measured before by the nEXO collaboration in vacuum and in LXe. In [20], samples from the manufacturer FBK (Fondazione Bruno Kessler) are examined in vacuum, with their reflectivity measured as a function of the angle of incidence as well as the wavelength. The optical parameters of the samples are determined via dedicated models and their behaviour in LXe is extrapolated.…”

Section: Introductionmentioning

confidence: 99%

Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon

Wagenpfeil,

Ziegler,

Schneider

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 • angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 • for the four samples and increases to up to 65 % at 70 • for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

show abstract

“…This structure was provided by FBK and used in [ 29 ] for a study of the SiPM reflectivity. Hamamatsu did not disclose the HPK VUV4 surface coating structure, and therefore, due to the lack of more detailed information, we assume the HPK MPPC has the same coating structure as the FBK VUV-HD3 SiPM.…”

Section: Spectroscopy Of the Biased Sipmmentioning

confidence: 99%

“…The presence (FBK VUV-HD3) and absence (HPK VUV4) of an interference pattern was also measured in [ 29 ] during reflectivity measurements for the HPK VUV4 MPPC and the previous generation of FBK SiPMs: the FBK VUV-HD1, which shares with the FBK VUV-HD3 the same surface coating and cell structure.…”

Section: Spectroscopy Of the Biased Sipmmentioning

confidence: 99%

Characterisation of SiPM Photon Emission in the Dark

McLaughlin

Gallina

Retière

et al. 2021

Sensors

View full text Add to dashboard Cite

In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark conditions, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emissions were taken with varying over-voltage in the wavelength range of 450–1020 nm. For the FBK VUV-HD3, at an over-voltage of 12.1±1.0 V, we measured a secondary photon yield (number of photons (γ) emitted per charge carrier (e−)) of (4.04±0.02)×10−6γ/e−. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of 10.7±1.0 V, we measured a secondary photon yield of (8.71±0.04)×10−6γ/e−. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 did not show an interference pattern—likely due to a thinner surface coating. The EMMIs of the HPK VUV4 also revealed a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device. The photon yield reported in this paper may be limited if compared with the one reported in previous studies due to the measurement wavelength range, which is only up to 1020 nm.

show abstract

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Cited by 17 publications

References 18 publications

Kiloton-scale xenon detectors for neutrinoless double beta decay and other new physics searches

Kiloton-scale xenon detectors for neutrinoless double beta decay and other new physics searches

Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon

Characterisation of SiPM Photon Emission in the Dark

Contact Info

Product

Resources

About