Reflection coefficient and optical conductivity of gallium nitride GaN

Abstract

Abstract. Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2-10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10 15 for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of -6.46·1015 for the photon energy 8.0 eV and a maximum value at -1.2·10 15. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region.

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

“…If a photon has higher energy than the optical bandgap then a transition occurs and an electron–hole pair (exciton) is generated. The mobility of these excitons represent the optical conductivity, which is an important parameter that is used to design optical detectors 42 . Due to the electronic charge neutrality, these excitons do not contribute to the electrical conductivity 43 .…”

Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz

“…This data will enable users directly compute coefficient spectrum in the unique probe range 107.35–165 GHz. N-GaN reflection coefficients have been earlier published by Akinlami and Olateju (2012) [3] in the photon energy range 2 to 10 eV. These data pertain to much lower photon energies in regime 444 µeV to 682 µeV and with energy resolution 413 neV (0.1 GHz interval).…”

Near-Strain-Free GaN/AlGaN Narrow Line Width UV Light Emission with Very Stable Wavelength on Excitation Power by Using Superlattices

“…For the BGR, the energy shift for relaxed material is about E g = − Kn 1/3 eV cm, where K is the bandgap coefficient (∼2.6 × 10 –8 eV cm) and n is the carrier density. − The photogenerated carrier density can be estimated by Δ n = ( A × (1 – R ) × α)/ h ν, where A is the energy density of the pump laser, R is the intensity reflectance, α is the absorption coefficient of the sample, and hv is the laser photon energy. From the literature, the reflection and absorption coefficients of Al 0.3 Ga 0.7 N under the injection of a 266 nm laser are ∼20% and 16 × 10 4 cm –1 , respectively. , With the given power range and repetition rate stated above, the photogenerated carrier density ranges from 1 × 10 17 to 6.8 × 10 18 cm –3 . Hence, the bandgap could change from −12.2 to −49.3 meV.…”