Reflection control for immersion lithography at 45/32-nm nodes

Tseng, Wan-Ju; Hsu, Ruei‐Hung; Hou, Shu Huei; Tseng, Tzu-Huai; Lin, Bill; Yu, Chun Chi; Kim, Sue Ryeon; Yu, Jeong Yun; Wayton, Gerald; Ciambra, Maurizio; Coley, Suzanne M.; Praseuth, David N.; Pugliano, Nick

doi:10.1117/12.776671

Cited by 2 publications

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“…In our previous work 4 , we had shown the successful optimization of a multilayer antireflectant system at 1.2NA for metal and via layers at 45nm and 32nm node logic devices. We demonstrated the optimization with CD uniformity, through pitch performance, LWR and profiles.…”

Section: Introductionmentioning

confidence: 99%

Immersion BARC for hyper NA applications

Huang

Chuang

Yeh

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. When patterning critical layers, a multilayer antireflectant system is required in order to control complex reflectivity resulting from various incident angles. Multilayer antireflectants typically consist of an organic and inorganic (TiN and SiON) layers. Fewer or thinner layers are desired for etch pattern transfer. However, it would make the reflectivity control through angle more difficult. We have investigated several antireflectants for a simplified multilayer stack. The organic films differ in terms of n, k, thickness and etch rate. The n, k, and thickness span the ranges of 1.60-1.85, 0.15-0.30, and 30-130nm, respectively. The overall patterning performance including profiles, line width roughness (LWR), overlap depth of focus margin (ODOF) and critical dimension uniformity (CDU) has been evaluated. An immersion tool at 1.35NA was used to perform lithography. Simulation was performed using Prolith TM software.

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Section: Introductionmentioning

confidence: 99%