Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Abstract

This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator‐free photonic integrated circuits based on quantum dot lasers.