2016
DOI: 10.1109/tasc.2016.2530700
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Reflective Power Limiter for X-Band With HTSC Switching Element

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Cited by 7 publications
(3 citation statements)
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“…It should be noted that the dimensions of the device were 6.3 × 4.5 mm 2 . In comparison with the design investigated earlier [8] the constriction sizes decreased almost twice. The YBaCuO HTSC film having thickness 150 nm was deposited on the NdGaO 3 0.5 mm substrate.…”
contrasting
confidence: 52%
“…It should be noted that the dimensions of the device were 6.3 × 4.5 mm 2 . In comparison with the design investigated earlier [8] the constriction sizes decreased almost twice. The YBaCuO HTSC film having thickness 150 nm was deposited on the NdGaO 3 0.5 mm substrate.…”
contrasting
confidence: 52%
“…大一个研究小组针对美军战术数据链(Link-16)用 环形器、超导带通滤波器和MEMS开关研制了一款 可调频率带阻滤波器 [25,26] , 其主要技术路线是用环 薄膜研制出工作于8 GHz的限幅器 [27,28] , 当输入 微波功率为13. [32] .…”
Section: 调频率滤波器也是一个重点研究方向 最近日本unclassified
“…Microelectromechanical systems (MEMS) [4], high-temperature superconductors [5,6], or phasetransition materials [7] have been used as active elements for microwave power limitation, but most current solutions use solid-state components such as positive-intrinsic-negative (PIN) diodes [8][9][10]. PIN diodes generally have modest insertion loss and fast response times while offering small dimensions, relatively simple implementation, and low cost.…”
Section: Introductionmentioning
confidence: 99%