2011
DOI: 10.1016/j.optcom.2011.02.077
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Reflective vertical cavity semiconductor saturable absorber for functional operations with thermal limitations and saturable index change

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Cited by 8 publications
(4 citation statements)
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“…Considering nonstanding wave, the length-averaged intensity within the VCSSA cavity due to multiple reflection and refraction is given by [19] …”
Section: Nonlinear Fabry-pérot Analysismentioning
confidence: 99%
“…Considering nonstanding wave, the length-averaged intensity within the VCSSA cavity due to multiple reflection and refraction is given by [19] …”
Section: Nonlinear Fabry-pérot Analysismentioning
confidence: 99%
“…In the first part of this paper we have studied the spectral reflectivity of the device for different input powers of the optical signal. The reflectivity of the device at normal incidence is given by [5,6] ( ) ( )…”
Section: A Power Characterizationmentioning
confidence: 99%
“…P c and P sat , are respectively the cavity and saturation power inside the cavity. The power inside the cavity can be expressed as [6] ( )(…”
Section: A Power Characterizationmentioning
confidence: 99%
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