Refractive Index of GaAs

Marple, D. T. F.

doi:10.1063/1.1713601

Cited by 317 publications

(43 citation statements)

References 6 publications

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“…This method has given fairly reliable values for the refractive indices of GaAs and PbS near the absorption edge over a range of doping levels [3]. The results are in good agreement with experimental values, where available, particularly for GaAs where the accurate measurements of Marple [4], using *Present address: Electro-Optics Group, Plessey Radar, Cowes, Isle of Wight. tPresent address: Research Centre, British Steel Corporation, Skippers Lane, Middlesbrough, Teesside.…”

Section: Introduction ; the Concept Of An Effective Band Gapsupporting

confidence: 68%

“…The approach, which has been briefly outlined in a previous paper [1 ], consists essentially of using empirical values for relatively pure material, e.g. the Marple values for GaAs [4], together with an effective energy gap to take account of different carrier concentrations and/or doping levels. The concept of an effective energy gap has been used in this context previously [1 ] to allow for variations with alloy composition in AlxGal-~As, with temperature, and to a certain extent (via the Burstein shift) with doping levels.…”

Section: Introduction ; the Concept Of An Effective Band Gapmentioning

confidence: 99%

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Effects of doping and free carriers on the refractive index of direct-gap semiconductors

Cross

Adams

1974

Opto-electronics

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A model for the doping and current dependence of the refractive index of direct-gap semiconductors has been developed and applied to GaAs in order to explain certain properties of single heterostructure injection lasers. The model involves the concept of an effective energy gap which takes account of the effects of doping and free carriers via the Burstein shift, the exchange interaction, and the average screened Coulomb potential of the impurities. This effective gap, together with empirical results for the energy dependence of the refractive index, facilitates the calculation of refractive index changes with doping and current. Numerical results are given for GaAs, and the model is applied particularly to the substrate and active regions of single heterostructure injection lasers. In these devices the refractive index values are particularly important in determining the dielectric waveguide properties. With the aid of our model, this feature can be discussed in detail, with special reference to the breakdown of the waveguide effect which occurs (a) for substrate doping levels below a critical value, and (b) for currents well above threshold ('saturation').

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Section: Introduction ; the Concept Of An Effective Band Gapsupporting

confidence: 68%

Section: Introduction ; the Concept Of An Effective Band Gapmentioning

confidence: 99%

Effects of doping and free carriers on the refractive index of direct-gap semiconductors

Cross

Adams

1974

Opto-electronics

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“…For instance, if a pressure of 1GPa is applied uniformly onto the whole device, the GaAs refractive index tensor [13,14] assumes the following values: n 11 = n 22 = 3.4274, n 33 = 3.4345. As the Maxwell equations show, this GaAs anisotropy mainly affects the TM-like propagation, whereas our electromagnetic analysis concerns the TE-like modes.…”

Section: Numerical Resultsmentioning

confidence: 99%

High sensitivity photonic crystal pressure sensor

Biallo¹,

Sario²,

D’Orazio³

et al. 2007

J. Eur. Opt. Soc.-Rapid Publ.

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A two-dimensional photonic crystal microcavity coupled to a photonic crystal waveguide is proposed to realise a high sensitive pressure sensor, designed on a GaAs membrane. A theoretical model is developed to evaluate the change of the refractive index induced by the application of a force onto a sensing surface. A linear calibration curve is obtained relating the resonant drop position to the applied pressure.

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“…with A = 8.950, B = 2.054, C 2 = 0.390 for T = 298 K [12], E F = 6.49 meV which corresponds to about n e = 1.6 × 10 17 cm -3 electrons in the well, θ = 0, and Γ = 10 meV from the experimental results [13].…”

Section: Theorymentioning

confidence: 97%

Intersubband transitions in coupled triple‐graded quantum wells under an electric field

Kasapoğlu

Sarı

Sökmen

2005

Physica Status Solidi (b)

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The intersubband transitions were calculated in three different shaped triple-graded quantum wells. The investigation involved changing the depth of the central well potential under an electric field applied parallel to the growth direction. By changing the depth of the central well potential, one can tune the resonance photon energy. This tunability gives a possibility for the realization of near-infrared electroabsorption modulators and detectors. In addition, the absorption coefficient as a function of the incident photon energy was obtained for the 1-2 transition in a triple square quantum well structure having the same physical parameters as the triple-graded quantum well structure.

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Refractive Index of GaAs

Cited by 317 publications

References 6 publications

Effects of doping and free carriers on the refractive index of direct-gap semiconductors

Effects of doping and free carriers on the refractive index of direct-gap semiconductors

High sensitivity photonic crystal pressure sensor

Intersubband transitions in coupled triple‐graded quantum wells under an electric field

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