Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula

Abstract

The graphical representation and numerical interpretation of the results obtained by a regression analysis for Matthiessen's formula have been investigated for the electron scattering due to micro-twins (MTs) and threading dislocations (TDs) in InSb quantum wells (QWs) at room temperature. By plotting the reciprocal of the total mobility vs the summation of the linear terms due to MTs and TDs, a two-dimensional graphical representation that clearly exhibits the “goodness of fit” of the regression analysis was depicted. The usefulness of numerical indexes, “effective defect density” and “equivalent defect scattering”, was discussed: “effective defect density” made it possible to evaluate the electron scattering in InSb QWs by using one type of structural defects, either MTs or TDs. “Equivalent defect scattering” enables one to intuitively grasp the difference in magnitude of electron scattering between MTs and TDs in InSb QWs.