Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics

Kittler, M.; Yu, Xuegong; Mchedlidze, Teimuraz; Arguirov, T.; Vyvenko, O. F.; Seifert, W.; Reiche, M.; Wilhelm, Thomas; Seibt, M.; Voß, O.; Wolff, A.; Fritzsche, Wolfgang

doi:10.1002/smll.200600539

Cited by 59 publications

(64 citation statements)

References 39 publications

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“…[10][11][12] Recent studies have drawn a more detailed picture indicating that dislocations possess some exceptional electronic and optical properties induced by their small dimensions. [13][14][15] Possible applications of dislocations as active components of semiconductor devices have been discussed. 16 Note that the cross-section area of a dislocation core is about 1 nm 2 characterizing the defects itself as native nanowires embedded in a perfect matrix.…”

Section: Introductionmentioning

confidence: 99%

On the electronic properties of a single dislocation

Reiche

Kittler

Erfurth

et al. 2014

Journal of Applied Physics

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A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm 2 , the current density through a single dislocation is J ¼ 3.8 Â 10 12 A/cm 2 corresponding to a resistivity of q ffi 1 Â 10 À8 X cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.

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Section: Introductionmentioning

confidence: 99%

On the electronic properties of a single dislocation

Reiche

Kittler

Erfurth

et al. 2014

Journal of Applied Physics

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“…The effect of a dislocation network in the interface of bonded wafers was impressively proved by a simple experiment [55]. Using electron beam induced current (EBIC) technique on a cross-section sample of a bonded wafer pair showed that carriers are transported predominantly along the interface.…”

Section: Electrical Measurements On Dislocationsmentioning

confidence: 98%

“…The evolution of the D-band luminescence has been also obtained on two-dimensional dislocation networks formed by wafer bonding. Photoluminescence, cathodoluminescence, and electroluminescence were applied for these studies (for instance [55,115,116]). All investigations proved a typical dependence of the resulting luminescence spectra on the type and distance of dislocations (or dislocation density) in the network.…”

Section: Optical Properties Of Dislocations-electron-hole Recombinatimentioning

confidence: 99%

Electronic and Optical Properties of Dislocations in Silicon

Reiche

Kittler

2016

Crystals

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Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core-exceeding 10% or more-causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.

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“…Properties of dislocation networks formed by semiconductor wafer direct bonding were described in numerous publications (for reviews see, e.g. Kittler et al, 2007;Kittler & Reiche, 2009). The dislocation networks may be considered as model structures resulting in a lot of new information about the structure and properties of dislocations.…”

Section: Characterization Of Individual Dislocationsmentioning

confidence: 99%