Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique

Tu, Charng-Gan; Su, Chih‐Ying; Liao, Che‐Hao; Hsieh, Chieh; Yao, Yufeng; Chen, Hao-Tsung; Lin, Chun-Han; Weng, Chi-Ming; Kiang, Yean‐Woei; Yang, C. C.

doi:10.1088/0957-4484/27/2/025303

Cited by 15 publications

(40 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No (11̅01) plane was observed in the GaN NWs. Lin et al and Jung et al studied the effects of the pulse duration and the interruption time on the GaN NW growth and found both parameters are crucial to limit the lateral growth and enhance the growth in axial direction. , Zhang et al and Tu et al observed the Ga droplet formation at the NW top after the Ga precursor pulse and the Ga droplet size can be controlled by tuning the supply of the Ga precursor. , In this way, GaN NWs with multiple sections of different cross-sectional sizes were formed and multiple color emissions from single NWs were realized with different InGaN QW growth on different sections …”

Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

“…537 To avoid the growth in the pyramid shape, pulsed growth mode had to be and the Ga droplet size can be controlled by tuning the supply of the Ga precursor. 540,541 In this way, GaN NWs with multiple sections of different cross-sectional sizes were formed and multiple color emissions from single NWs were realized with different InGaN QW growth on different sections. 541 We also worked on the Ga-polar GaN NW growth by selective area MOVPE, but we investigated the growth with continuous flows of Ga precursor and NH 3 to seek possibilities for the growth to take the vertical NW shape.…”

Section: Chemical Reviewsmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis and Applications of III–V Nanowires

et al. 2019

View full text Add to dashboard Cite

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

show abstract

Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

Section: Chemical Reviewsmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Figure 10c shows the nanowires grown with an additional temperature variation step, which leads to two segment pairs of “wide-narrow-wide” diameter configurations. In previous works, researchers found that the diameters of ZnO or GaN can be changed by controlling the source supply [37,58]. In this work, a new method to control the nanowire diameter is demonstrated, which is instructive with respect to the diameter-controlled growing nanowires of other materials.…”

Section: Resultsmentioning

confidence: 87%

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Zhao

Wang

et al. 2016

Nanomaterials

View full text Add to dashboard Cite

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

show abstract

“…It should be mentioned that for the selective area growth (SAG) of NWs, − parasitic deposition on the SiO 2 surface can also be eliminated without using trenches. In other words, the trench is not indispensable for eliminating the parasitic deposition in SAG.…”

mentioning

confidence: 99%

In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit

et al. 2019

View full text Add to dashboard Cite

Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated sapphire substrate was realized in which the issues of parasitic deposition and resultant bypass current were resolved by combining the novel shadowing effect of the deep trench with the surface-passivation effect of the SiO 2 coating. Due to the robust connection and the absence of a contact barrier in bridging NWs, the intrinsic sensing properties of the NW itself can be obtained. For the first time, the gas-sensing properties (e.g., NO 2 ) of the bridging GaN NWs were studied. With the assistance of UV light, the detection limit was improved from 4.5 to 0.5 ppb at room temperature, and the corresponding response time was reduced from 518 to 18 s. This kind of sensor is promising for high sensitivity (detection of less than parts per billion), low power consumption (capable of room-temperature operation), high stability (variation in resistance of <0.8% during 240 days), and in situ monolithic integration.

show abstract

Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique

Cited by 15 publications

References 49 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit

Contact Info

Product

Resources

About