Regulating crystal growth via organic lithium salt additive for efficient Kesterite solar cells

Zhou, Jiazheng; Xu, Xiao; Duan, Biwen; Wu, Haiming; Shi, Jiangjian; Luo, Yanhong; Li, Dongmei; Meng, Qingbo

doi:10.1016/j.nanoen.2021.106405

Cited by 106 publications

(85 citation statements)

References 71 publications

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“…In addition, only high-temperature treatment brings about the worst cell performance. In this work, the organic lithium salt was introduced to achieve high-quality absorbers according to our recent work, 28 and the same tendency of variation in device performance caused by the post-annealing treatment is found irrespective of whether LiTFSI doping was incorporated or not (Figure S4).…”

Section: ■ Results and Discussionmentioning

confidence: 91%

“…The CZTSSe absorber was prepared according to our previous work, in which MoO 3 -based substrate and LiTFSI were introduced to obtain a high-quality absorber layer. , In brief, Cu(CH 3 COO) 2 ·H 2 O (1.1150 M), ZnCl 2 (0.8108 M), SnCl 2 ·2H 2 O (0.6757 M), and LiTFSI (0.045 M) were completely dissolved in DMSO, and then thiourea (3.02 M) was added and stirred to obtain an almost colorless solution. The fabrication process of precursor films was carried out in a nitrogen-filled glovebox.…”

Section: Methodsmentioning

confidence: 99%

“…and isoelectronic elements (i.e., Ag, Cd, Ge, etc.) is employed to facilitate the phase transition and crystal growth, and inhibit the defect states of the CZTSSe absorber. − An ultrathin MoO 3 layer is introduced to eliminate the multilayer crystallization of the CZTSSe by controlling the back-interface reaction …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Duan

Lou

Meng

et al. 2021

ACS Appl. Mater. Interfaces

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The post-heating treatment of the CZTSSe/CdS heterojunction can enhance the interfacial properties of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this regard, a two-step annealing method was developed to enhance the heterojunction quality for the first time. That is, a low-temperature (90 °C) process was introduced before the high-temperature treatment, and 12.3% efficiency of CZTSSe solar cells was achieved. Further investigation revealed that the CZTSSe/CdS heterojunction band alignment with a smaller spike barrier can be realized by the two-step annealing treatment, which assisted in carrier transportation and reduced the charge recombination loss, thus enhancing the open-circuit voltage (V OC) and fill factor (FF) of the devices. In addition, the two-step annealing could effectively avoid the disadvantages of direct high-temperature treatment (such as more pinholes on CdS films and excess element diffusion), improve the CdS crystallization, and decrease the defect densities within the device, especially interfacial defects. This work provides an effective method to improve the CZTSSe/CdS heterojunction properties for efficient kesterite solar cells.

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Section: ■ Results and Discussionmentioning

confidence: 91%

Section: Methodsmentioning

confidence: 99%

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Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Duan

Lou

Meng

et al. 2021

ACS Appl. Mater. Interfaces

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“…A kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film is a promising light absorber material for its low cost and eco-friendly constituent elements, highly in accord with low-carbon-emission requirements. − Recently, more groups have researched a seven-year-pinned efficiency and promoted a certified efficiency over 13%, bringing great prospects for CZTSSe solar cells. − However, the efficiency is limited by a large V oc deficit (χ max = V oc / V oc SQ = 64.2%) . Sn-related defects are deemed to be the main V oc limitation rather than Cu Zn antisite defects because Sn-related defects are mostly deep-level defects (V sn , Sn Zn , Sn Zn -Cu Zn , etc.…”

Section: Introductionmentioning

confidence: 99%

Back Shallow Ge Gradient Enhanced Carrier Separation for CZTSe Solar Cells through a Coselenization Process

Liu

Gao

et al. 2021

ACS Appl. Mater. Interfaces

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Given the prominent success of the Ga gradient in CuIn 1−x Ga x Se 2 (CIGSe) solar cells, Ge gradient implementation is a promising way to boost Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. However, Ge-graded CZTSSe solar cells only possess a low efficiency of 9.2%, far from that of Geincorporated CZTSSe without a gradient (12.3%). Herein, we demonstrated a shallow Ge gradient CZTSe solar cell with an improved efficiency over 10%. The Ge gradient was achieved through a GeSe 2 −Se coselenization process, where GeSe 2 acts as a low-temperature fluxing agent to assist crystallization and induce Ge transport toward the back interface. The relieved band tails and improved junction quality, leading to a better carrier separation, were found to take a primary responsibility for device improvement. These results highlight a remarkable breakthrough for Ge-graded CZTSe solar cells and offer a promising way to develop Ge-involved solar cells.

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“…It is worthy of mentioning that not all impurities are detrimental. The potassium (K) 9,10 and lithium (Li) [11][12][13] ions are beneficial for crystalline growth and defect passivation and, thus, exert a positive effect on the device efficiency. The Sn ions are the essential ingredients for the precursor solution.…”

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confidence: 99%

11.39% efficiency Cu₂ZnSn(S,Se)₄ solar cells from scrap brass

Pan

Yan

Zhao

et al. 2022

SusMat

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Kesterite Cu2ZnSn(S,Se)4 is one of the most promising next‐generation thin‐film photovoltaic materials. Along with the efficiency advancement of kesterite solar cells, a cost‐effective fabrication process with low carbon footprint plays an increasingly important role considering the near‐future industrialization of CZTSSe solar cells. In this study, we proposed an environmental friendly process to recover copper and zinc from the scrap brass, which can be directly used as the precursor salts to fabricate efficient CZTSSe thin‐film solar cells. The best power conversion efficiency (PCE) of the device using the proposed eco‐friendly process is 11.39% (certified at the National PV Industry Measurement and Testing Center) for CZTSSe solar cells.

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Regulating crystal growth via organic lithium salt additive for efficient Kesterite solar cells

Cited by 106 publications

References 71 publications

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Back Shallow Ge Gradient Enhanced Carrier Separation for CZTSe Solar Cells through a Coselenization Process

11.39% efficiency Cu₂ZnSn(S,Se)₄ solar cells from scrap brass

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Regulating crystal growth via organic lithium salt additive for efficient Kesterite solar cells

Cited by 106 publications

References 71 publications

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

Back Shallow Ge Gradient Enhanced Carrier Separation for CZTSe Solar Cells through a Coselenization Process

11.39% efficiency Cu2ZnSn(S,Se)4 solar cells from scrap brass

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Product

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11.39% efficiency Cu₂ZnSn(S,Se)₄ solar cells from scrap brass