2018
DOI: 10.1016/j.jallcom.2018.01.078
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Regulating interface adhesion and enhancing thermal conductivity of diamond/copper composites by ion beam bombardment and following surface metallization pretreatment

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Cited by 40 publications
(8 citation statements)
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“…Here, we compared our results with the previous studies (Fig. 5(b)) [7,8,[60][61][62][63][64][65][9][10][11][12][13][57][58][59]. Since the thermal conductivity is particularly sensitive to the diamond size and volume fraction, which are critical for deciding the material cost, although the highest experimentally achieved thermal conductivity is around 900 W/m-K [11], it is only meaningful to compare the performance of the composite fabricated with similar diamond volume fraction and size within a similar range.…”
Section: (G)-(h))mentioning
confidence: 88%
“…Here, we compared our results with the previous studies (Fig. 5(b)) [7,8,[60][61][62][63][64][65][9][10][11][12][13][57][58][59]. Since the thermal conductivity is particularly sensitive to the diamond size and volume fraction, which are critical for deciding the material cost, although the highest experimentally achieved thermal conductivity is around 900 W/m-K [11], it is only meaningful to compare the performance of the composite fabricated with similar diamond volume fraction and size within a similar range.…”
Section: (G)-(h))mentioning
confidence: 88%
“…The substrate pretreatment procedure ( Figure 1 b) proved to be one of the main factors affecting the properties of metal films and tracks, including adhesion and conductivity [ 13 , 49 , 50 ]. The laser-induced synthesis with a plain glass substrate ( Figure 1 a) resulted in the fabrication of copper structures with poor adhesion, and with an unstable value of resistance.…”
Section: Resultsmentioning
confidence: 99%
“…Thermal stress originates from a mismatch of the coefficients of thermal expansion (CTEs) between the heat sink material and the chip during the packaging and working state. It is necessary to solve the influence of alternating stresses caused by temperature changes Metals 2021, 11,196. https://doi.org/10.3390/met11020196 https://www.mdpi.com/journal/metals on the reliability and normal working conditions of devices [2].…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, Chen et al [10] illustrated that the obtained composites exhibited TC values as low as 200 W m −1 K −1 by a high-pressure high-temperature powder metallurgy (HPHT-PM) method. Sang et al [11] produced a low TC (approximately 114 W m −1 K −1 ) for an uncoated diamond/copper composite fabricated by an infiltration method. Now, the method of coating the diamond particle surface with carbide-forming elements has been widely used to reduce the interface thermal resistance between diamond and Cu before the preparation of diamond/Cu composites [12,13].…”
Section: Introductionmentioning
confidence: 99%