Regulating thermoelectric properties of Eu0.5Ca0.5Zn2Sb2 through Mg dopant

Le, Wenkai; Sheng, Wenwen; Liu, Runtao; Yuan, Meijin; Yang, Wenwei; Lv, Jingyi; Yin, Li; Chen, Chen; Wang, Xinyu; Zhang, Zongwei; Liu, Kejia; Wang, Tianchi; Zhang, Qian; Shuai, Jing

doi:10.1016/j.mtener.2022.101071

Cited by 3 publications

(4 citation statements)

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“…To better understand the thermal transport process, the κ e (Figure c) and κ l (Figure S4c) were calculated. Because of the Wiedemann–Franz law, κ e = L σ T , − and κ l = κ tot – κ e , here L is the Lorenz number (Figure S4b). According to the measured S , the L was obtained by the formula L = [ 1.5 + exp true( prefix− false| S false| 116 true) ⁡ ] × 10 − 8 which was proposed by Snyder et al As shown in Figure c, with x content increased from 0 to 0.02, the κ e displayed an obvious reduction (93%) from 1.06 W K –1 m –1 ( x = 0) to 0.07 W K –1 m –1 ( x = 0.02) at 723 K. Benefiting from the decrease in κ tot , the ZT of the Bi-doped sample was improved in Figure d.…”

Section: Resultsmentioning

confidence: 99%

Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Rong

Chen

et al. 2023

ACS Appl. Energy Mater.

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In this work, carrier concentration optimization and effective mass increase of Cu 2 GeSe 3 , which were considered to be a synergetic effect of electrical transport properties, were achieved by the co-doping of Bi and Zn on the Cu site. This effect led to a higher Seebeck coefficient of ∼307.76 μV K −1 at 723 K for the Cu 1.988 Bi 0.01 Zn 0.002 GeSe 3 sample. This effect also resulted in a higher power factor of ∼8.66 μW cm −1 K −2 at 723 K and an average power factor of ∼6.29 μW cm −1 K −2 at the temperature range of 303− 723 K for the Cu 1.988 Bi 0.01 Zn 0.002 GeSe 3 sample, which were ∼135 and ∼196% larger than those of pristine Cu 2 GeSe 3 , respectively, and are among the highest value of the Cu 2 GeSe 3 -based sample. Benefiting from simultaneous optimization of the power factor, the maximum ZT of ∼0.75 for the Cu 1.988 Bi 0.01 Zn 0.002 GeSe 3 sample at 723 K was obtained, which is ∼288% higher than that of Cu 2 GeSe 3 .

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Section: Resultsmentioning

confidence: 99%

Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Rong

Chen

et al. 2023

ACS Appl. Energy Mater.

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“…Maximizing the power factor PF = S 2 𝜎 while minimizing 𝜅 tot is pivotal for amplifying both the ZT and ZT avg value. [5,6] As is well known, stable thermoelectric devices require matching n-p-type legs with similar trends in ZT values over the operating temperature range. While n-type Bi 2 Te 3 has been shown to achieve ZT value of ≈1.0 at 600 K via doping optimization strategies, [7,8] identifying p-type materials that can work efficiently from room temperature to 600 K is of great practical significance.…”

Section: Introductionmentioning

confidence: 98%

“…Maximizing the power factor PF = S 2 σ while minimizing κ tot is pivotal for amplifying both the ZT and ZT avg value. [ 5,6 ]…”

Section: Introductionmentioning

confidence: 99%

Enhancing Thermoelectric Performance in P‐Type Sb₂Te₃‐Based Compounds Through Nb─Ag Co‐Doping with Donor‐Like Effect

Yang,

Le,

Lyu

et al. 2023

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P‐type Sb2Te3 has been recognized as a potential thermoelectric material for applications in low‐medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high‐energy ball milling and rapid hot‐pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb2Te3, yielding a remarkable ZT value of 0.55 at 323 K due to the donor‐like effect. Furthermore, the incorporation of Nb─Ag co‐doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb2Te3‐based materials attain an impressive range of 0.5–0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb1.97Nb0.03Ag0.005Te3 escalates to 0.92 at 548 K with a record average ZT value (ZTavg) of 0.75 within the temperature range of 323–573 K. These achievements hold promising implications for advancing the viability of V–VI commercialized materials for low‐medium temperature application.

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“…One of the most important things to realize an efficient thermoelectric generator for waste heat recovery is to find materials with high thermoelectric performance . The performance of a thermoelectric material is evaluated by the dimensionless figure of merit ZT (=σ S 2 T /κ, where σ, S , T , and κ are the conductivity, Seebeck coefficient, absolute temperature, and thermal conductivity, respectively) . Nevertheless, a thermoelectric generator relies not only on its performance efficiency in the high thermoelectric efficiency (ZT) of its n- and p-type thermoelectric couples but also on good contacts with the electrodes. , This means that, in fabricating the thermoelectric elements, it is necessary to reduce the interface contact resistance between thermoelectric materials and the electrode .…”

Section: Introductionmentioning

confidence: 99%

Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials

Yang

Sheng

et al. 2023

ACS Appl. Mater. Interfaces

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Intensive efforts have been conducted to realize the reliable interfacial joining of thermoelectric materials and electrode materials with low interfacial contact resistance, which is an essential step to make thermoelectric materials into thermoelectric devices for industrial application. In this review, the roles of structural integrity, interdiffusion, and contact resistance in long-term reliabilities of thermoelectric modules are outlined first. Then interfacial reactions of near-room-temperature Bi2Te3-based thermoelectric materials and various electrode materials are reviewed comprehensively. We also summarized the joining behavior of the mid-temperature PbTe-based thermoelectric materials and commonly used electrode materials. Subsequently, for other thermoelectric materials systems, i.e., SiGe, CoSb3, and Mg3Sb2, previous attempts to join with some electrode materials are also recapitulated. Finally, some future prospects to further improve the joint reliability in thermoelectric device manufacturing are proposed. We believe that this review will provide guidance for preparing thermoelectric devices and optimizing thermoelectric device design.

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Regulating thermoelectric properties of Eu0.5Ca0.5Zn2Sb2 through Mg dopant

Cited by 3 publications

References 31 publications

Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Enhancing Thermoelectric Performance in P‐Type Sb₂Te₃‐Based Compounds Through Nb─Ag Co‐Doping with Donor‐Like Effect

Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials

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Regulating thermoelectric properties of Eu0.5Ca0.5Zn2Sb2 through Mg dopant

Cited by 3 publications

References 31 publications

Inducing High Power Factor in Cu2GeSe3-Based Bulk Materials via (Bi, Zn)-Co-doping

Inducing High Power Factor in Cu2GeSe3-Based Bulk Materials via (Bi, Zn)-Co-doping

Enhancing Thermoelectric Performance in P‐Type Sb2Te3‐Based Compounds Through Nb─Ag Co‐Doping with Donor‐Like Effect

Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials

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Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Inducing High Power Factor in Cu₂GeSe₃-Based Bulk Materials via (Bi, Zn)-Co-doping

Enhancing Thermoelectric Performance in P‐Type Sb₂Te₃‐Based Compounds Through Nb─Ag Co‐Doping with Donor‐Like Effect