Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Abidi, Irfan Haider; Liu, Yuanyue; Pan, Jie; Tyagi, Abhishek; Zhuang, Minghao; Zhang, Qicheng; Cagang, Aldrine Abenoja; Weng, Lu‐Tao; Sheng, Ping; Goddard, William A.; Luo, Zhengtang

doi:10.1002/adfm.201700121

Cited by 37 publications

(36 citation statements)

References 49 publications

(67 reference statements)

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“…This effect can be elevated further using a nickel foam backing instead of nickel plate, slowing the growth rate even more (Figure S4, Supporting Information). The discrepancy between hBN growth on Cu/quartz and Cu/nickel is similar to that observed for carbon gettering growth of graphene . Therefore, our results indicate a similar gettering mechanism for boron species can be realized by the nickel support on the backside of the Cu foil during CVD growth of hBN.…”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Insupporting

confidence: 79%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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Robust and photostable single photon emitters (SPEs) underpin a number of promising quantum information science and technologies. [1][2][3][4] Solid-state quantum light sources are highly sought after for their ease of integration into onchip architectures, and rapid progress has been made recently with a variety of solidstate sources such as quantum dots, [5,6] color centers in diamond, [7,8] silicon carbide, [9,10] rare-earth materials, [11] carbon nanotubes, [12] and layered van der Waals materials. [3] One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid-state platform capable of hosting bright, [13][14][15][16][17] linearly polarized, [13,18] and optically stable SPEs operating at room temperature with high photon purity. [19,20] While the zerophonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6-2.4 eV), implying the existence of multiple defect species, [15,18,[21][22][23] recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV. [24,25] This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions. However, to fully understand and exploit the diversity of emissions reported in hBN further advances in controlling the observed emission spectra and emitter density are required.In order to target the incorporation of particular structural defects during CVD growth, a method to modify the dominant defect formation processes is required. In situ monitoring of hBN growth on Cu has clarified that hBN growth is subject to complex interaction between the precursor species, and the catalyst surface/bulk. [26] As a result, controlling the interactions between the precursor species and the catalyst is critical to achieve highly crystalline hBN growth, but also offers a promising avenue to controlled defect engineering during CVD growth of hBN. In other material systems such as InAs/ GaAs quantum dots modifying catalyst properties such as lattice mismatch during epitaxial growth has been definitively linked to defect creation. [27] Similarly graphene is known to be dependent of the interactions with the catalyst bulk/surface, where growth depends strongly on the relative phase of the catalyst and the supply of carbon in and out of the catalyst, controlling both defect formation and density. [28,29] Despite added complications for CVD growth of hBN, especially due to Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through ...

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Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Insupporting

confidence: 79%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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“…(111) facets reportedly gave faster graphene growth with fewer adlayers compared to facets with other orientations,8b,f and this was stated as possibly being due to a higher diffusion rate of carbon species on Cu(111),8f,9 and the smooth surface of such facets was also proposed to suppress adlayer formation 8b. Another approach has recently been reported that yielded single layer graphene with very few adlayers by restricting the diffusion of carbon from the backside of the Cu foil using a Ni support substrate . Although the density of adlayers was suppressed by these strategies, a clear picture of the mechanism(s) for generating few‐ to no‐adlayer graphene by CVD has not been obtained, and a reliable and controllable approach is needed for the growth of single layer graphene that never contains adlayers.…”

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confidence: 99%

Adlayer‐Free Large‐Area Single Crystal Graphene Grown on a Cu(111) Foil

et al. 2019

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To date, thousands of publications have reported chemical vapor deposition growth of “single layer” graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer‐free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter‐long ≈100 nm wide “folds,” separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi‐randomly in the polycrystalline graphene film. High‐performance field‐effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer‐free single crystal graphene film.

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“…We then attempt to hinder the FLG nucleation by using a Ni foil, serving as a C sink, to support the Cu substrates. 40,41 As seen in Figure S5e, this trial has failed, possibly because the Cu and Ni foils are not perfectly flat and in intimate contact with each other, leaving gaps for CH4 to diffuse through Cu. Another group has used a W foil inside a Cu enclosure for the same purpose.…”

Section: Resultsmentioning

confidence: 99%

Restoring self-limited growth of single-layer graphene on copper foil via backside coating

et al. 2019

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The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.

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Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Cited by 37 publications

References 49 publications

Selective Defect Formation in Hexagonal Boron Nitride

Selective Defect Formation in Hexagonal Boron Nitride

Adlayer‐Free Large‐Area Single Crystal Graphene Grown on a Cu(111) Foil

Restoring self-limited growth of single-layer graphene on copper foil via backside coating

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