Mimicking the human brain to achieve neuromorphic computing
holds
promise in the field of artificial intelligence (AI). Optoelectronic
synapses are regarded as the crucial foundation stone in neuromorphic
computing due to their capability to intelligently process optoelectronic
input signals. Herein, two donor–acceptor (D–A)-type
metallopolymers, P-Cu and P-Zn, containing
porphyrin moieties are designed and synthesized, which are utilized
as a resistive switching layer for preparation of memristors. The
resulting memristors exhibit significantly enhanced electrical characteristics,
displaying a high ON/OFF ratio, a low threshold voltage (V
th), and superior cycle-to-cycle reproducibility. This
enhancement is attributed to the formation and dissociation of charge
transfer (CT) states induced by inserted metal ions. Importantly,
the P-Cu-based memristor demonstrates the capability
to co-modulate optoelectronic signals, effectively emulating versatile
synaptic functions of the nervous system. These functions include
excitatory postsynaptic current (EPSC), paired-pulse facilitation
(PPF), short-term plasticity (STP), long-term plasticity (LTP), transition
from short-term memory (STM) to long-term memory (LTM), and learning-experience
behavior. Moreover, multiple Boolean logical functions were successfully
implemented using the paired stimuli of electrical pulses. The neuromorphic
computing function was also proven through pattern recognition, achieving
a recognition rate of up to 86.08% for handwritten digits. This study
offers a potent approach for developing multifunctional artificial
synaptic devices and artificial neural network platforms and opens
up the innovative application of metallopolymers in the fields of
optoelectronics and AI.