2023
DOI: 10.1016/j.jorganchem.2022.122563
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Regulating WORM/Flash electrical memory behavior of metallopolymers through varying metal centers

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Cited by 2 publications
(4 citation statements)
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“…The synthetic procedure and chemical structures of two newly designed metallopolymers are depicted in Figure S1. The intermediate (L1-TMS) was prepared using a previously reported method . Subsequently, ligands L1-H and L1-M were obtained through protodesilylation and metal complexation, respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…The synthetic procedure and chemical structures of two newly designed metallopolymers are depicted in Figure S1. The intermediate (L1-TMS) was prepared using a previously reported method . Subsequently, ligands L1-H and L1-M were obtained through protodesilylation and metal complexation, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Inspired by biological processes such as photosynthesis and the transport and storage of oxygen by hemoporphyrin molecules, our previous report on four new metal polymers found that, without metal ions in the porphyrin rings, devices displayed nonvolatile binary WORM memory. 33 This demonstrates the feasibility of regulating metallopolymer memory behaviors by changing the central metal ions, highlighting the importance of metal complexes in organic memristors.…”
Section: ■ Introductionmentioning
confidence: 83%
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