Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure

Zhang, Zengkai; Tao, Qirui; Bai, Hui; Tang, Hao; Cao, Yu; Shi, Yixuan; Jin-Song, None Wu; Su, Xianli; Tang, Xinfeng

doi:10.1016/j.jeurceramsoc.2021.08.041

Cited by 15 publications

(5 citation statements)

References 38 publications

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“…As can be seen from Figure 5c,d, in comparison with other reported results for excellent (Bi,Sb) 2 Te 3 , the ZT max ≈1.41 at 350 K is competitive with the top values reported in the literature, [5,20,29,34,37,46,47,55] while the ZT avg ≈1.23 within 300-500 K surpasses the majority of values that we are aware of. [5,20,26,37,46,47,56,57] [5,20,29,34,37,46,47,55] and d) the average ZT (300−500 K) [5,20,26,37,46,47,56,57] for the x = 0.11, y = 0.06 sample and previously reported (Bi,Sb) 2 Te 3 materials. e) The Vickers hardness H V of typical samples in this work is compared with different reported data.…”

Section: The Excellent Figure-of-merit (Zt) and Mechanical Robustnessmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 99%

“…Temperature dependence of b) ZT values of Bi 0.5 Sb 1.5 Te 3‐ y Se y + x wt.% Cu 2 GeSe 3 samples. Comparison of c) the temperature‐dependent ZT [ 5,20,29,34,37,46,47,55 ] and d) the average ZT (300−500 K) [ 5,20,26,37,46,47,56,57 ] for the x = 0.11, y = 0.06 sample and previously reported (Bi,Sb) 2 Te 3 materials. e) The Vickers hardness H V of typical samples in this work is compared with different reported data.…”

Section: Resultsmentioning

confidence: 99%

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High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

Pang,

Yuan,

Zhang

et al. 2023

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Bi2Te3‐based alloys are the benchmark for commercial thermoelectric (TE) materials, the widespread demand for low‐grade waste heat recovery and solid‐state refrigeration makes it imperative to enhance the figure‐of‐merits. In this study, high‐performance Bi0.5Sb1.5Te3 (BST) is realized by incorporating Cu2GeSe3 and Se. Concretely, the diffusion of Cu and Ge atoms optimizes the hole concentration and raises the density‐of‐states effective mass (md*), compensating for the loss of “donor‐like effect” exacerbated by ball milling. The subsequent Se addition further increases md*, enabling a total 28% improvement of room‐temperature power factor (S2σ), reaching 43.6 µW cm−1 K−2 compared to the matrix. Simultaneously, the lattice thermal conductivity is also significantly suppressed by multiscale scattering sources represented by Cu‐rich nanoparticles and dislocation arrays. The synergistic effects yield a peak ZT of 1.41 at 350 K and an average ZT of 1.23 (300–500 K) in the Bi0.5Sb1.5Te2.94Se0.06 + 0.11 wt.% Cu2GeSe3 sample. More importantly, the integrated 17‐pair TE module achieves a conversion efficiency of 6.4%, 80% higher than the commercial one at ΔT = 200 K. These results validate that the facile composition optimization of the BST/Cu2GeSe3/Se is a promising strategy to improve the application of BST‐based TE modules.

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Section: The Excellent Figure-of-merit (Zt) and Mechanical Robustnessmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

Pang,

Yuan,

Zhang

et al. 2023

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“…It is, thus, essential to regulate the hole concentration for sintered materials of p-type Bi 0.5 Sb 1.5 Te 3 or similar compositions. Usually, the nonequivalent element doping, such as Ag, Cu, Mn, Mg, Pb, Cd, Zn, or Ca, can effectively increase the hole concentration. ,,− Moreover, doping with the chalcogenides of these elements can also introduce various defects into the Bi 2 Te 3 -based matrix and reduce κ lat for higher TE performance. Especially, (Cu, Ag) 2 X (X = S, Se, and Te) are typical “phonon-liquid electron-crystal” materials, which have attracted wide attention due to their extremely low κ lat . , Actually, Cu 2 Se doping in Bi 2 Te 3 and Cu 2 Te doping in SnTe have been proved to effectively reduce κ lat . , …”

Section: Introductionmentioning

confidence: 99%

Optimized Thermoelectric Properties of Bi_0.48Sb_1.52Te₃ through AgCuTe Doping for Low-Grade Heat Harvesting

Yan

Wang

et al. 2021

ACS Appl. Mater. Interfaces

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Zone-melted Bi 2 Te 3 -based alloys are the only commercially available thermoelectric (TE) materials, but they suffer from mediocre figure of merit (ZT) values and brittleness. In this work, we prepared Bi 0.48 Sb 1.52 Te 3 sintered samples using a hot-pressing method and added tiny AgCuTe to improve the comprehensive properties. Because the carrier concentration is boosted by the AgCuTe addition, the bipolar effect at higher temperature is explicitly suppressed and the power factor is also improved in a broad temperature scope. Simultaneously, κ lat is mostly diminished by the introduced phonon scattering centers comprising point defects, dislocations, and grain boundaries. Consequently, we achieved a ZT max of 1.25 at 350 K and its average ZT ave of 1.1 from 300 to 500 K in the (Bi 0.48 Sb 1.52 Te 3 + 3 wt % Te) + 0.12 wt % AgCuTe sample. Composed of this sample and commercial Bi 2 Te 2.5 Se 0.5 , the fabricated TE module manifests a maximum power output density of 0.31 W cm −2 (T cold = 300 K and T hot = 500 K). This work suggests that AgCuTe-doped Bi 0.48 Sb 1.52 Te 3 is promising for recovering low-grade thermal energy near room temperature.

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“…In general, excellent thermoelectric materials are considered to have high S , high σ, and low κ tot . − Unfortunately, these transport parameters of S , σ, and κ tot are generally interdependent, and the significant increase in ZT is a long-term challenge in the thermoelectric field. At present, a large number of reports of increased ZT value have all been made by increasing the power factor ( PF ) and decreasing the κ l values. − The chemical doping, energy filtering, and band structure engineering have been effective strategies for acquiring a high PF , and multi-scale phonon scattering and nanometer structure are considered to be effective strategies for decreasing κ l values. − …”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Thermoelectric Performance of Cu₂GeSe₃ via Isoelectronic (Ag, S)-co-substitution

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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Recently, ternary Cu-based Cu-IV-Se (IV = Sb, Ge, and Sn) compounds have received extensive attention in the thermoelectric field. Compared with Cu-Sb-Se and Cu-Sn-Se, Cu-Ge-Se compounds have been less studied due to its poor Seebeck coefficient and high thermal conductivity. Here, the Cu 2 GeSe 3 material with high electrical conductivity was first prepared, and then, its effective mass was increased by doping with S, which led to the Seebeck coefficient of the doped sample being 1.93 times higher than that of pristine Cu 2 GeSe 3 at room temperature. Moreover, alloying Ag at the Cu site in the Cu 2 GeSe 2.96 S 0.04 sample could further cause a 5.16 times increase in the Seebeck coefficient at room temperature, and the lattice thermal conductivity was remarkably decreased because of the introduction of the dislocations in the Cu 2 GeSe 3 sample. Finally, benefitted from the high Seebeck coefficient and low thermal conductivity, a record high ZT = 0.9 at 723 K was obtained for the Cu 1.85 Ag 0.15 GeSe 2.96 S 0.04 sample, which increased 345% in comparison with the pristine Cu 2 GeSe 3 , and it is among the highest reported values for Cu 2 GeSe 3based thermoelectric.

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Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure

Cited by 15 publications

References 38 publications

High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

Optimized Thermoelectric Properties of Bi_0.48Sb_1.52Te₃ through AgCuTe Doping for Low-Grade Heat Harvesting

Enhancement of the Thermoelectric Performance of Cu₂GeSe₃ via Isoelectronic (Ag, S)-co-substitution

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Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure

Cited by 15 publications

References 38 publications

High Performance Thermoelectric Power of Bi0.5Sb1.5Te3Through Synergistic Cu2GeSe3and Se Incorporations

High Performance Thermoelectric Power of Bi0.5Sb1.5Te3Through Synergistic Cu2GeSe3and Se Incorporations

Optimized Thermoelectric Properties of Bi0.48Sb1.52Te3 through AgCuTe Doping for Low-Grade Heat Harvesting

Enhancement of the Thermoelectric Performance of Cu2GeSe3 via Isoelectronic (Ag, S)-co-substitution

Contact Info

Product

Resources

About

High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

High Performance Thermoelectric Power of Bi_0.5Sb_1.5Te₃Through Synergistic Cu₂GeSe₃and Se Incorporations

Optimized Thermoelectric Properties of Bi_0.48Sb_1.52Te₃ through AgCuTe Doping for Low-Grade Heat Harvesting

Enhancement of the Thermoelectric Performance of Cu₂GeSe₃ via Isoelectronic (Ag, S)-co-substitution