In this study, a method to identify the impedance of the sample composed of Sn02 nanowires (NWs) has been presented. The studied sensor structures were based on one dimensional (ID) Sn02 NWs grown by thermal deposition on silicon substrate. The topography of Sn02 NWs was investigated by means of scanning electron microscopy (SEM).The results of qualitative and quantitative analysis in selected micro region have been presented. Furthermore, the electrical properties of the NWs were measured. The base of the measurement comprised impedance spectroscopy, Pade data approximation restrained by passivity condition. This study demonstrates that it is possible to separate the characteristic parameters for various transport phenomena in the NW.
R EFERENCES[1] A. Gurlo, "Nanosensors: towards morphological control of gas sensing activity. Sn02, In203, Zno and W03 case studies," Nanoscale, 3,2011, pp. 154-165.