Relation between structure and electronic properties of ion irradiated polymers

Davenas, J.; Xl, Xu; Boiteux, Gisèle; Sage, Daniel

doi:10.1016/0168-583x(89)90891-4

Cited by 175 publications

(59 citation statements)

References 12 publications

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“…This includes breaking covalent bonds, scissoring or crosslinking of polymer chains, and formation of derivatives and volatile species. [1][2][3][4] The application of these radiation-induced chemical reactions owes its main value to various properties such as improved hardness, wear resistance, or electrical conductivity that cannot be achieved chemically. 5 Here, we report on the irradiation of two different polymers with heavy ions of energy of several hundred MeVs.…”

Section: Introductionmentioning

confidence: 99%

Chemical degradation of polyimide and polysulfone films under the irradiation with heavy ions of several hundred meV

Steckenreiter

Balanzat

Fueß

et al. 1999

J. Polym. Sci. A Polym. Chem.

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Section: Introductionmentioning

confidence: 99%

Chemical degradation of polyimide and polysulfone films under the irradiation with heavy ions of several hundred meV

Steckenreiter

Balanzat

Fueß

et al. 1999

J. Polym. Sci. A Polym. Chem.

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“…We compared other data of a previous study of polyimide polymer, which performed with nitrogen ion at 50 keV energy [12]. It shows similar tendency with MPPO case, since they are considered as a governed same physical modification mechanism.…”

Section: Resultssupporting

confidence: 51%

“…α (manufactured by VG Scientific Co.) using MgK free radicals and, consequently, chemical reaction in the polymer. Polymer chain rupture, crosslinks, unsaturated bond formation and gas liberation take place as a result of ion irradiation at low dose range [12]. Thus, various structures including regions of condensed aromatic structures are formed.…”

Section: Methodsmentioning

confidence: 99%

Enhancement of IC tray's surface conductivity using accelerator technology

Lee

Kil²,

Ha³

et al.

PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268)

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We designed and manufactured a high current ion source for ion beam applications. As industrial application, we studied the relation between bombarded nitrogen fluence and surface resistivity on MPPO (Modified Polyphenylene Oxide) material, which are used for the IC tray, using the high current ion implantation technology. During the transportation, the electrical charge is induced on the tray surface and it generated the electrical shock into the IC chip. To prevent such damage, we developed the implantation process for the IC tray surface modification, which carried out at an accelerating energy of 50keV, ion beam current of 50mA. The surface resistivity of MPPO IC tray that is normally insulating was decreased in the range of 10 12 to 10

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“…Davenas et al 13 found that an ion fluence of at least 10 16 N ϩ ions/cm 2 (with an energy of 150 keV) was necessary to significantly lower the electrical sheet resistance of Kapton films. Therefore, the implant fluence that transforms the polymer structure sufficiently to cause the pronounced improvement in gas penetration properties is lower by about a factor of 10 than the fluence required to cause the changes in the polyimide connected with the decrease of electrical resistivity.…”

Section: Introductionmentioning

confidence: 98%