Fatigue affects the durability of radio frequency microelectromechanical systems (RF MEMS) devices. It is common to rely on actuation voltage cycles or resonant frequencies shift to estimate the fatigue life of MEMS devices. Actuation of moving mechanical parts within the device causes transient stresses because of transient vibration. Such stresses and stress cycles are difficult to account for when fatigue life is estimated by observing actuation voltage or resonant frequencies shift only. This work investigates the effect of transient stresses on the durability of RF MEMS switch, using a benchmarked finite element‐based structural dynamics model of the switch to generate the stress‐time history of the device. Principal normal stresses are calculated from raw stress data and ordered such that (σ1 ≥ σ2 ≥ σ3). Maximum principal stress amplitudes at pull‐in and pull‐out are calculated, and their corresponding number of cycles are determined by rainflow counting method. A Cumulative damage index (Dc) is determined using Miner's rule. This study revealed that, when transient stresses are taken into consideration, the cumulative damage caused by a single on‐off cycle, of the switch studied, is 1.031 × 10−6, and its life‐to‐failure is 9.7 × 105 on‐off cycles. Whereas the life‐to‐failure of the switch, without considering transient stresses, is approximately 10.3 × 108 cycles. Results are compared with published data for similar switches, and they are in good agreement.