Relationship between a nitrogen‐related hole trap and ionized acceptors density in p‐type GaAsN grown by chemical beam epitaxy

Abstract

The relationship between a nitrogen (N)‐related hole trap and the density of ionized acceptors (NA) in p‐type GaAsN grown by chemical beam epitaxy (CBE) is investigated using deep level transient spectroscopy and temperature dependence of the junction capacitance. As results, NA at room temperature is found to be in linear dependence with N concentration. Further, a N‐dependent sigmoid increase of the junction capacitance in a specific range of temperature, between 70 and 100 K, is observed. Such behavior is explained by the thermal ionization of a N‐related like‐acceptor hole trap; located at approximately 0.15 eV above the valence band maximum of GaAsN. The density of this trap determines in great part the magnitude of NA and causes the high background doping in unintentionally doped p‐type GaAsN grown by CBE. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Absorption properties of GaAsBi based p–i–n heterojunction diodes

“…From figure 8, it seems that the i-regions of the 4 samples all have an n-type background doping. Since the Bi atom is much larger than As it is more likely to behave as an isoelectronic donor [21], just as nitrogen is likely to act as an isoelectronic acceptor in GaAsN, which leads to an unintentional p-type doping of the material [22].…”