Relationship Between Band Gap and Bulk Modulus of Semiconductor Materials

Li, Keyan; Kang, Congying; Xue, Dongfeng

doi:10.1166/mat.2012.1014

Cited by 5 publications

(3 citation statements)

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“…As the injection increases, the conduction band minimum (CBM) increases more rapidly than the valence band maximum (VBM), which yields an increase in the band gap (Figures a and S5a). This increase in the band gap can account for the increase in the bulk modulus from this theoretical relation: μ = pB + q , where μ = E g / v b represents the excited energy density of chemical bonds, E g is the band gap, v b is the average volume occupied by each bond, and p and q are constants. For charged diamonds, the determined relation is μ = 0.003 B + 0.123 (Figure S5b).…”

Section: Results and Discussionmentioning

confidence: 92%

Electronic Densification and Stiffening of Diamond

2023

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Diamond, with a bulk modulus of 435 GPa, is the most incompressible natural material. Searching for ultra-incompressible materials with a bulk modulus significantly higher than diamond has attracted much attention. However, this search has been long questioned since it has not found incompressible materials significantly superior to diamond to date. From first-principles calculations, we here demonstrate that the density (4.34 g/cm3) and the bulk modulus (645 GPa) of the electronically modified diamond can exceed 23% and 48% of the pristine diamond. Meanwhile, the tensile strength and strain-to-failure increase from 86 GPa and 13% for the pristine diamond to 242 GPa and 30% for the electronically modified diamond. These results indicate simultaneous stiffening, strengthening, and toughening of the diamond upon electronic modifications. Electronic structure analyses show that the ultrahigh density and mechanical performance of the electronically modified diamond are attributed to the shortening and stiffening of covalent bonds from the increase of bonding electron density.

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Section: Results and Discussionmentioning

confidence: 92%

Electronic Densification and Stiffening of Diamond

2023

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“…The Young's modulus is associated with the features of valence electrons regarding the electronegativity parameter as to the valence electrons density is proportional to Young's modulus of semiconductors. [81,82] Note that the p-type MoS 2 experiences smaller electron density than n-type one, thus one believes to obtain smaller Young's modulus and lower stiffness against those of n-type MoS 2 .…”

Section: Applicationmentioning

confidence: 99%

Synthesis, Characterization, and Typical Application of Nitrogen‐Doped MoS₂ Nanosheets Based on Pulsed Laser Ablation in Liquid Nitrogen

Shahi

Parvin

Mortazavi

et al. 2022

Physica Status Solidi (a)

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One group of 2D layered materials is the transition metal dichalcogenides (TMDs) with MX 2 structure, where M denotes a transition metal such as Mo, W, Re, Nb, etc. and X ascertains a chalcogen atom, namely, S, Se, and Te. Unlike graphene's single carbon atomic-thick layer, a monolayer of TMDs consists of X-M-X sandwiches which are interacted by interlayer weak van der Waals forces and strong in-plane covalent bonding between atoms. As a result of their interesting and diverse structural, electronic, optical, mechanical, chemical, and thermal properties, this class of materials is still a topic of many recent scientific studies. [1][2][3][4][5][6][7] Particularly, MoS 2 shows a potential application in 2D nanoscale technology. [1,[8][9][10] The bandgap of MoS 2 semiconductor undergoes from indirect 1.29 eV (bulk) to direct 1.90 eV (monolayer) transitions. [5] The monolayer MoS 2 contains large specific surface areas, strong visible light-absorbing ability, and extreme flexibility against the bulk MoS 2 . [6,11] Such intriguing properties make MoS 2 a perfect alternative material for numerous applications such as photocatalysts, [12,13] photodetectors, [14,15] field-effect transistors, [16] solar cells, [17] and biomedical purposes [18,19] as well as optical fiber sensors (OFS). [10,20] The latter is a well-known sensor due to high sensitivity, noise and electromagnetic interference immunity, compact size, low cost, and multiplex capability. The OFS applications based on Fabry-Pérot interferometer (FPI) include industry, environment, medical care, homeland security, and defense. A simple and low-cost ultrasensitive configuration has been shown to upgrade FPI-acoustic OFS. Owing to high strength, flexibility, and relatively small Young's modulus, the MoS 2 membrane significantly improves the sensor sensitivity against others. [10]

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“…[1][2][3][4] ZnO is a II-VI wide-gap semiconductor with the direct gap of 3.3 eV and an exciton binding energy of 60 meV, 5 6 which make it to be a suitable candidate for practical applications in the field of optics, electronics and catalysts. [7][8][9][10][11][12][13] As an optical material, the emission of ZnO quantum dots (QDs) contains both intrinsic photoluminescence (PL) in the range of 200-400 nm and defect PL in the range of 400-600 nm. Zhang et al found that the visible emission properties of ZnO QDs shows highly size-and defect-dependent behaviors.…”

Section: Introductionmentioning

confidence: 99%

Color-Tunable ZnO Quantum Dots Emitter: Size Effect Study and a Kinetic Control of Crystallization

Zhang¹,

Zhou²,

Li³

et al. 2013

mater focus

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From the viewpoint of chemical reaction kinetics, the particle size of ZnO quantum dots (QDs) can be well designed upon their reaction tunable crystallization processes in solution, the visible emission of these QDs is tunable from blue to yellow. Some key factors such as the reaction time, temperature, the content of OH − and exotic ion Mg 2+ were comprehensively studied, which finely control the particle size of ZnO QDs and can be easily monitored by UV-vis spectral variations. All results indicate that the particle size of ZnO QDs increases with prolonging the reaction time, increasing the reaction temperature, and increasing the content of OH − , however, the introduction of the exotic ion Mg 2+ can effectively decrease the particle size of ZnO QDs during their crystallization.

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Relationship Between Band Gap and Bulk Modulus of Semiconductor Materials

Cited by 5 publications

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Electronic Densification and Stiffening of Diamond

Electronic Densification and Stiffening of Diamond

Synthesis, Characterization, and Typical Application of Nitrogen‐Doped MoS₂ Nanosheets Based on Pulsed Laser Ablation in Liquid Nitrogen

Color-Tunable ZnO Quantum Dots Emitter: Size Effect Study and a Kinetic Control of Crystallization

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Relationship Between Band Gap and Bulk Modulus of Semiconductor Materials

Cited by 5 publications

References 0 publications

Electronic Densification and Stiffening of Diamond

Electronic Densification and Stiffening of Diamond

Synthesis, Characterization, and Typical Application of Nitrogen‐Doped MoS2 Nanosheets Based on Pulsed Laser Ablation in Liquid Nitrogen

Color-Tunable ZnO Quantum Dots Emitter: Size Effect Study and a Kinetic Control of Crystallization

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Synthesis, Characterization, and Typical Application of Nitrogen‐Doped MoS₂ Nanosheets Based on Pulsed Laser Ablation in Liquid Nitrogen