Relationship between bonding structure and mechanical properties of amorphous carbon containing silicon

Influence of silicon concentration on the haemocompatibility of amorphous carbon

“…This removes two p bonds per substituted C atom and thus promotes the formation of sp 3 -hybridized C-C bonding configuration. XPS also shows a decrease in the sp 2 -hybridized C bondings [20] Fig. 3 presents the surface roughness evolution of a-C(Si) films.…”

“…3 presents the surface roughness evolution of a-C(Si) films. Higher surface roughness signifies a film has lower density, while lower surface roughness signifies denser film [20].…”

“…Since the roughest surface is 2 nm, the dispersive component is very much related to the density of the film. The density is low at Si concentration below $16.6 at% and increases as Si concentration is increased as manifested by the deposition kinetics and bonding evolution [20]. The drop in density means an increase in the inter-atomic distance.…”

Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition

“…But there are some problems that still exist in industrial applications. Alloying DLC films with Si has been reported to solve some of the problems, reduce internal stress, enhance wear property and improve thermal stability [1][2][3][4][5][6][7][8][9][10]. Plasma source ion implantation (PSII) and many other methods have been applied to prepare Si-containing DLC films [11,12].…”

Tribological properties of platinum/ruthenium/nitrogen doped diamond-like carbon thin films deposited with different negative substrate biases

“…1 as a function of negative substrate bias. The N content decreases from about 22.96 to 20.62 at% while the C + Ru and Pt contents increase from about 76.62 to 78.70 at% and from about 0.42 to 0.68 at%, respectively, with increased negative substrate bias from 0 to -120 V. Since the kinetic energy of sputtered ions is proportional to substrate bias, the increased negative substrate bias accelerates the sputtered ions onto the film surfaces resulting in the proportionally increased C + Ru and Pt contents in the PtRuN-DLC films [24][25][26][27][28]. Compared to the ionization rate of N 2 gas inside the deposition chamber, the increased kinetic energies of the C, Pt and Ru ions with increased negative substrate bias reduce the N content in the PtRuN-DLC films.…”