Relationship between crystal defects and leakage current in β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes

Kasu, Makoto; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oshima, Takayoshi; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

doi:10.7567/jjap.55.1202bb

Cited by 84 publications

(62 citation statements)

References 25 publications

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“…This is a more usual definition than where the current sharply increases, since the latter depends on conduction mechanism) of the large area device was small (∼15 V) and increased with reduced area to 466 V for the smallest diode active area. This is consistent with the larger devices having an increased probability of containing defects that initiate premature breakdown [35]- [41]. Most previously reported diode rectifiers have had areas of less than 10 −3 cm 2 and this effect will not be obvious in that situation [7], [17]- [19].…”

Section: Resultssupporting

confidence: 81%

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Yang

Ren

Pearton

et al. 2018

IEEE Trans. Electron Devices

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Large area (up to 0.2 cm 2) Ga 2 O 3 rectifiers without edge termination were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n + Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 • cm 2 for these largest diodes, decreasing to 5.9 × 10-4 • cm 2 for 40 × 40 μm 2 devices. The temperature dependence (25°C-125°C) of forward current density was used to extract the barrier height of 1.08 eV for Ni and a Richardson's constant of 48 A • cm −2 • K-2. Ideality factors were in the range 1.01-1.05, with the barrier height decreasing with temperature. The reverse breakdown was a strong function of diode area, decreasing from 466 V (1.6 × 10 −5 cm 2) to 15 V for 0.2 cm 2. This led to power figureof-merits (V 2 B /R ON) in the range 3.68 × 10 8-865 W • cm −2 over this area range. The reverse breakdown voltage scaled approximately as the contact perimeter, indicating it was dominated by the surface and decreased with temperature with a negative temperature coefficient of 0.45 V • K −1. The reverse recovery time when switching from +1 V to reverse bias was 34 ns.

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Section: Resultssupporting

confidence: 81%

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Yang

Ren

Pearton

et al. 2018

IEEE Trans. Electron Devices

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“…The bulk-limited conductions are dominantly controlled by trap states and trap energy levels in insulator materials, and most types of leakage currents in various devices including a field effect transistor (FET) and a metal/insulator/semiconductor (MIS) junction are dependent on the bulk-limited conduction mechanisms 11 . Recent studies on the relationship between a defect density in dielectric materials and a leakage current have revealed that the dielectric defect density at a contact junction correlates directly with the leakage current through the dielectric film 12 , 13 . It highlights that conventional insulating films can become to transport stably electrical charge carriers without an electrical breakdown by controlling contact junctions or defect densities in the insulator layers.…”

Section: Introductionmentioning

confidence: 99%

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Lee

Yoon

Lim

et al. 2018

Sci Rep

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The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However, depending on an electrode-limited conduction mechanisms of the conventional devices, a narrow processing window for a thickness of the insulator thin-film and an inability to control a magnitude and direction of the currents are challenges to overcome. Herein, we report a new approach to enable electrical charge carriers to pass stably through a relatively-thick insulator layer and to control a magnitude and polarity of the currents by applying an oxide semiconductor electrode in a metal/insulator/metal structure. We reveal that the electrical conduction in our devices follows a space charge-limited conduction mechanism which mainly depends on the charge carriers injected from contacts. Therefore, characteristics of the current including a current value and a rectification ratio of input signal are precisely controlled by electrical properties of the oxide semiconductor electrode. The unique current characteristics in metal/insulator/oxide semiconductor structures give extendable inspirations in electronic materials science, even a prominent solution for various technology areas of electronics.

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“…Our case of 8 μm with doping 4.4 × 10 15 cm −3 has a theoretical breakdown more than an order of magnitude larger than the experimental value. 43,44…”

Section: Resultsmentioning

confidence: 99%

“…[45][46][47][48][49][50][51][52][53][54][55][56][57][58] This is a stringent test of material quality, since large diodes increase the probability of incorporating defects into the active region, degrading reverse breakdown voltage. 37,39,43,45 Lateral devices can achieve high breakdown voltage using large contact separations, but cannot simultaneously achieve high forward current due to the low total conduction thickness. They also have high on-state resistance.…”

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confidence: 99%

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Yang

Fares

Elhassani

et al. 2019

ECS J. Solid State Sci. Technol.

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There is interest in developing large area Ga 2 O 3 rectifiers for applications in hybrid power converters. Vertical geometry, Schottky rectifiers with area 1.2 × 1.2 mm 2 fabricated on thick (8μm), undoped (n = 4.4 × 10 15 cm −3) β-Ga 2 O 3 epitaxial layers oN conducting bulk substrates exhibit both high forward current (1A in pulsed mode) and reverse breakdown voltage (V B = 760V). This breakdown voltage was ∼200V higher than rectifiers without the presence of a bilayer SiO 2 / SiN x field plate. This edge termination is critical for obtaining high breakdown voltage by reducing electric field crowding around the metal contact periphery. Optimization of the field plate design is still needed, since devices are observed experimentally to breakdown at the contact periphery. When purposely driven to failure at high reverse bias, pits are observed in the high field regions at the edge of the contact. The specific on-resistance (R on) for these large area rectifiers was 22 m .cm −2 , with a figure-of-merit V B 2 /Ron of 26 MW.cm −2. The potential of Ga 2 O 3 for power electronics is clear when it is realized that these values are still an order of magnitude lower than theoretical values. The diode on-off ratio was in the range 2.7 × 10 7-2.2 × 10 9 when switching from +1.5V forward bias to 1-100V reverse bias.

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Relationship between crystal defects and leakage current in β-Ga₂O₃ Schottky barrier diodes

Cited by 84 publications

References 25 publications

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

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Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

Cited by 84 publications

References 25 publications

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

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Relationship between crystal defects and leakage current in β-Ga₂O₃ Schottky barrier diodes

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Vertical Geometry, 2-A Forward Current Ga₂O₃ Schottky Rectifiers on Bulk Ga₂O₃ Substrates

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers