Relationship between microstructure and electrochemical characteristics in steel corrosion

Rha, Chong Yoon; Kim, Woo Sik; Kim, Ji Wan; Park, Hyung Ho

doi:10.1016/s0169-4332(00)00711-x

Cited by 4 publications

(1 citation statement)

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“…Interfacial interactions of metals with oxide and polymer surfaces play a key role in improving adhesion, 1,2 inhibiting corrosion, 3,4 smoothing surface, [5][6][7] and achieving selective deposition. 8,9 Among them, Cu-SiO 2 system has attracted great interest recently because of its application to catalysis for alcohol oxidation 10 and to interconnect metallization in ultra-large scale integration (ULSI).…”

Section: Introductionmentioning

confidence: 99%

Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

Hu¹,

Noda²,

Tsuji³

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The effect of interfacial interactions on the initial growth of Cu on clean SiO 2 and 3mercaptopropyltrimethoxysilane (MPTMS)-modified SiO 2 substrates by sputter deposition was studied using transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. Plasma damage during sputter deposition makes surfaces of MPTMS-modified SiO 2 substrates consist of small MPTMS islands several tens of nanometers in diameter and bare SiO 2 areas. These MPTMS islands are composed of disordered multilayer MPTMS aggregates. The initial growth behavior of Cu on MPTMS-modified SiO 2 substrates differs from that on clean SiO 2 substrates, although Cu grows in 3D-island mode on both of them.After a 2.5-monolayer Cu deposition on clean SiO 2 substrates, spherical Cu particles were formed at a low number density of 1.3×10 16 /m 2 and at a long inter-particle distance of 5 nm. In contrast, after the same amount of deposition on MPTMS-modified SiO 2 substrates, Cu particles preferentially grow on MPTMS islands at a high number density of 3.9×10 16 /m 2 and at a short inter-particle distance of 3 nm, but do not grow on bare SiO 2 areas. The increased number density and the decreased inter-particle distance indicate that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO 2 substrates than on clean SiO 2 substrates. This difference in Cu mobility is attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO 2 substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO 2 substrates.

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