Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs

Abstract

We formulate lattice perturbation theory for gauge theories in noncommutative geometry. We apply it to three-dimensional noncommutative QED and calculate the effective action induced by Dirac fermions. In particular "parity invariance" of a massless theory receives an anomaly expressed by the noncommutative Chern-Simons action. The coefficient of the anomaly is labelled by an integer depending on the lattice action, which is a noncommutative counterpart of the phenomenon known in the commutative theory. The parity anomaly can also be obtained using Ginsparg-Wilson fermions, where the masslessness is guaranteed at finite lattice spacing. This suggests a natural definition of the lattice-regularized Chern-Simons theory on a noncommutative torus, which could enable nonperturbative studies of quantum Hall systems.

Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O

“…5 These recent findings may help to understand further improvements in device performance that can be achieved when gate dielectrics are prepared by synergistic combinations of the above mentioned growth procedures. [7][8][9][10][11] We report here to the best of our knowledge, on the first studies of isotopic tracing of N, O, and H during thermal growth of oxynitride films in a RTP furnace in the synergistic gas sequences reported in Refs. 7-11, namely ͑i͒ growth of a SiO 2 film in O 2 , followed by nitridation in NH 3 , and then followed by reoxynitridation in N 2 O͑O 2 →NH 3 →N 2 O, samples 1-5 in Table I͒, [7][8][9] and ͑ii͒ growth of oxynitride films in N 2 O, followed by renitridation in NH 3 ͑N 2 O→NH 3 , samples 6-8͒.…”

“…[7][8][9][10][11] We report here to the best of our knowledge, on the first studies of isotopic tracing of N, O, and H during thermal growth of oxynitride films in a RTP furnace in the synergistic gas sequences reported in Refs. 7-11, namely ͑i͒ growth of a SiO 2 film in O 2 , followed by nitridation in NH 3 , and then followed by reoxynitridation in N 2 O͑O 2 →NH 3 →N 2 O, samples 1-5 in Table I͒, [7][8][9] and ͑ii͒ growth of oxynitride films in N 2 O, followed by renitridation in NH 3 ͑N 2 O→NH 3 , samples 6-8͒. 10,11 Isotopically enriched gases were used for the RTP growth, namely, 99% 18 Table I, together with the total amounts of all isotopes present in the resulting oxynitride films as measured by nuclear reaction analyses ͑NRA͒.…”

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

“…For instance, type-I heterojunctions were used to implement a quantum-well structure to confine carriers for efficient light-emitting diode [1][2][3] and laser diode devices. [4] Additionally, a resonant tunneling diode, featuring the negative differential resistance (NDR) phenomenon, was implemented via a quantum-well structure comprising type-I heterojunctions (dielectric/semiconductor). [5][6][7][8] A type-II heterojunction structure confined electrons well in a varied channel region, thereby facilitating the implementation of a high-electron-mobility transistor.…”

Thermal Nitridation of SiO2 Films in Ammonia: Isotopic Tracing of Nitrogen and Oxygen in the Initial Stages

“…constitution. 7 The practical reason is the possibility for performing simultaneously a rather heavy nitridation of the oxide film surface and a rather light nitridation of the interface by using a low pressure NH3 atmosphere in a rapid thermal processing (RTP) furnace.6° Another point is that when the surfacial and interfacial silicon oxynitride layers are poorly or not at all constituted (typically up to 100 s), the transport of atoms proceeds very fast due to the high mobility of oxygenic and nitrogenic species in SiO3 in the absence of the diffusion barriers formed by the N containing oxynitride layers.…”