Relationship between patterning and dissolution charactaristics of chemical amplification resists using partly protected poly(p-vinylphenol).

Kumada, Teruhiko; Kubota, Shigeru; Koezuka, Hiroshi; Hanawa, Teturo; Kishimura, Shinji; Nagata, Hitoshi

doi:10.2494/photopolymer.4.469

Cited by 15 publications

(41 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The organic soluble TBP becomes aqueous alkali soluble BAP by deprotection of t-BOC to carboxylic acid groups as shown in Scheme 1 and BAP can act as a dissolution promoter. TBP is belong to a compound series of t-Bu esters of aromatic carboxylic acids which have been successfully applied to two-or three-component chemical amplification resist systems [4,6,11,12].…”

Section: Resultsmentioning

confidence: 99%

“…The acid-labile, t-BOC protected dissolution inhibitors in the form of tert-butyl (t-Bu) carbonate or t-Bu ester derived from phenol or benzoic acid functional groups were successfully applied to the three-component positive resist system as follows: t-Bu naphthalene-2-carboxylate and 2-(t-BOC-oxy)naphthalene [8], t-Bu cholate [4], 2,2-bis[4-(t-BOC-oxy)phenyl]propane [9,10], di-t-Bu isophthalate [11], and 2,2-bis[4-(t-BOC-methoxy)phenyl]propane [12]. Other acid-labile compounds such as acetals and prthoesters were also used in the formulations of highly sensitive positive resists [3].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

Ahn

Kang

Kim

et al. 1992

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

t-BOC protected hexakis(4-t-BOC-phenoxy)cyclotriphosphazene, TBP, was synthesized from a semiinorganic phosphazene compound and its acid-catalyzed thermal deprotection was utilized in the design of a three-component positive resist system based on the combined principles of chemical amplification and dissolution inhibition. The new resist system, PTPNS(NRI TBP/PAG), is formulated with novolac resin (NR), TBP and a photoacid generator (PAG). The dissolution characteristics of PTPNS in alkaline development are ideally suited for application to positive type resists which are based on a dissolution inhibition mechanism. The t-BOC protected TBP of the PTPNS resist system effectively acts as an acid-labile dissolution inhibitor of novolac resin when TBP concentration is more than 10 % by weight. As a representative, PTPNS(100/15/5) (by weight parts) exhibited high sensitivity in the range of 20 to 25 mJ/cm2 with contrast of 5 after exposure at 250nm light and PEB treatment at 100 to 130°C. Appropriately formulated PTPNS resist rendered positive-tone patterns down to sub-half micron with high sensitivity when the resist was exposed to KrF excimer laser or electron beam and developed with 2.38 wt% tetramethylamonium hydroxide solution.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

Ahn

Kang

Kim

et al. 1992

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…In the previous study, the dissolution inhibitor also acts as the dissolution promotor at the exposed region [4]. DtBiP has the acid labile function such as tert-butyl ester, and decomposes to isophthalic acid by catalytic acid generated from PAG.…”

Section: Sensitivity and Y The Sensitivity Of The Resists With And Wimentioning

confidence: 99%

“…The addition of dissolution inhibitor has been promising to the enhancement of the dissolution rate ratio between the exposed and unexposed region for the developer [4].…”

Section: Introductionmentioning

confidence: 99%

Characterization of tBOC based chemically amplified resist for SR lithography.

Kumada

Adachi

Watanabe

et al. 1997

J. Photopol. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

“…Alternative base soluble resins were sought (such as the ones without tBOC protection in Fig. 9) but PHOST has established its position as a matrix In addition to the two-component resist system composed of a partially protected PHOST and a PAG, a three-component approach involving incorporation of an additional acid-labile small dissolution inhibiting compound ( Figure 12) has been investigated quite extensively, especially in Japan [53,[58][59][60].…”

Section: Evolution Of Positive Deep Uv Resistsmentioning

confidence: 99%

Evolution and Progress of Deep UV Resist Materials.

Itô

1998

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

It has been almost thirty years since the first deep UV exposure was carried out and almost twenty five years since the term "deep UV lithography" was coined. Although resist systems classified as "chemical amplification resists" are the workhorse for the 248 nm deep UV lithography, the resist materials have evolved significantly in the realm of deep UV lithography as well as within the boundary of chemical amplification. This paper describes the evolution and progress of the deep UV (248-193 nm) positive resist materials that have occurred in the last quarter century.

show abstract

Relationship between patterning and dissolution charactaristics of chemical amplification resists using partly protected poly(p-vinylphenol).

Cited by 15 publications

References 0 publications

A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

Characterization of tBOC based chemically amplified resist for SR lithography.

Evolution and Progress of Deep UV Resist Materials.

Contact Info

Product

Resources

About