Relationship between solid state parameters and melting parameters for alkali halides

Shanker, J.; Bhende, W. N.; Kumar, Munish

doi:10.1016/0038-1098(85)90854-3

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…There have been several attempts [91 to 931 to investigate correlations between various solid state parameters such as radius ratio, effective charge parameter, polarizabilities, fractional ionic character, and interionic distances. It has been demonstrated [94] that the solid state parameters show direct correlationship with the melting parameters. In Fig.…”

Section: Correlations Between Solid State Parameters and Melting Paramentioning

confidence: 99%

“…5. The correlations between changes in nearest neighbour distances and coordination number in alkali halides in going from solid state to melt have been studied by Shanker et al [94]. With the help of such investigations it has been possible to understand the structural changes of alkali halides on melting.…”

Section: Correlations Between Solid State Parameters and Melting Paramentioning

confidence: 99%

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Studies on Melting of Alkali Halides

Shanker

Kumar

1990

Physica Status Solidi (b)

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Section: Correlations Between Solid State Parameters and Melting Paramentioning

confidence: 99%

Section: Correlations Between Solid State Parameters and Melting Paramentioning

confidence: 99%

Studies on Melting of Alkali Halides

Shanker

Kumar

1990

Physica Status Solidi (b)

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“…In recent years, they have gained increased interest due to their prominent applications in the fabrication of various electronic, optical and optoelectronic devices. Shanker et al 23 studied the relationship between solid state parameters and melting parameters for alkali halides and reported that melting temperature and relative change in volume after melting vary in a systematic manner with the ionic character of bond. 2 During the past few years, considerable efforts, e.g., see references [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] , have been made to understand the interrelation between their various structural, optical and electronic properties, such as lattice constants, interionic distance, radius ratio, refractive index, electronic polarizability, dielectric constant, cohe-242 NASAR sive energy, bond energy, magnetic susceptibility, energy gap, bulk modulus, etc.…”

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confidence: 99%

Correlation between standard enthalpy of formation, structural parameters and ionicity for alkali halides

Nasar¹

2013

J Serb Chem Soc

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The standard enthalpy of formation (ΔHo) has been considered to be an interesting and useful parameter for the correlation of various properties of alkali halides. The interrelation between ΔHo and structural parameters for the halides of Li, Na, K and Rb has been thoroughly analyzed. When cationic component element is kept constant in a homologous series of alkali halides, the negative value of ΔHo has been observed to decrease linearly with increase of interionic distance (d) and accordingly following empirical equation ΔHo = α + βd (where α and β are empirical constants) has been established. However, for common anionic series of alkali halides an opposite nonlinear trend has been observed with the exception of common fluorides. The correlation study on the standard enthalpy of formation has been extended in term of radius ratio and also discussed in the light of ionization energy of the metal, electron affinity of the halogen, size of the ions, ionic character of bond and lattice energy of the compound

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“…Reports of single-step electrodeposition of thin Cu͑In,Ga͒Se 2 films have included Matsuoka et al, 31 who described processing of devices from CuGa x In 1−x Se 2 films deposited on SnO 2 -coated glass. Shanker and Garg 32 reported the single-step electrodeposition of a range of Cu͑In,Ga͒Se 2 alloys, of bandgaps between 1.20 and 1.65 eV, from a high pH bath. Kampmann et al 14 reported large area, 80 cm 2 , electrodeposition of Cu͑In,Ga͒Se 2 from single baths onto Mo and ITO/In 2 Se 3 substrates.…”

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Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Calixto

Dobson

McCandless

et al. 2006

J. Electrochem. Soc.

119

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Single-bath electrodeposition of polycrystalline Cu͑In,Ga͒Se 2 thin films for photovoltaic applications is described. Cu͑In,Ga͒Se 2 was deposited onto Mo electrodes from low concentration aqueous baths containing CuCl 2 , InCl 3 , GaCl 3 , and H 2 SeO 3 . Buffering the solutions to pH ϳ 2.5 stabilized bath chemistry and improved Cu͑In,Ga͒Se 2 film composition. Bath concentrations were shown to affect composition of deposited films, with a bath ͓Se 4+ ͔/͓Cu 2+ ͔ ratio of 1.75 required to maintain suitable deposited Se and Cu levels, while ͓In 3+ ͔ could be adjusted to control deposited In and Ga. Deposited films initially exhibited significant cracking, which was prevented by lowering the ͓Se 4+ ͔ in the bath, and contained Cu 2−x Se as secondary phases, resembling cauliflower florets, embedded in the film surfaces. The formation of these secondary phases was overcome by pretreating the Mo electrodes with a short 1 min deposition from the Cu͑In,Ga͒Se 2 bath. This, coupled with a multipotential deposition regime, led to growth of smooth, compact, crack-free films of near stoichiometric values. Mechanisms of film growth and morphology control are discussed. All as-deposited films exhibit low crystallinity, and for device processing require recrystallization by annealing in an H 2 Se atmosphere. Promising preliminary results of electrodeposited Cu͑In,Ga͒Se 2 devices are presented.Polycrystalline Cu͑In,Ga͒Se 2 has exhibited very promising performance for thin film photovoltaic ͑PV͒ application, now exceeding 19% conversion efficiencies at the laboratory scale. 1,2 The best quality devices, hitherto, have been processed using high vacuum based techniques. 2 However, there is an interest in developing deposition techniques that avoid the use of high vacuum, especially when considering scale-up to industrial processing levels. Electrodeposition requires only off-the-shelf, low cost equipment and allows deposition over large areas at low temperature conditions, good control of film thickness, and potentially high utilization of bath species. The high absorption coefficient of Cu͑In,Ga͒Se 2 ͑ϳ10 5 cm −1 ͒ allows thin films, Ͻ2 m, to be applied to PV devices. Electrodeposited CdTe PV devices have been successfully processed, reaching near commercial performance. 3 A number of groups have reported electrodeposition-based processing of CuInSe 2 and Cu͑In,Ga͒Se 2 films, employing a number of approaches: sequential deposition of individual metal films, 4 deposition of various precursors, 5-7 and single-step deposition, where all elements are deposited simultaneously. 8 Single-step deposition processes are appealing in order to simplify device manufacture. The successful deposition of CuInSe 2 from a single electrochemical bath onto a range of different substrate types has been previously reported, 8-19 and a few groups have attempted to describe bath chemistry and mechanisms of film growth. 9,11,20-22 As-deposited films are generally of low crystallinity, and a post-deposition anneal, often in a selenium-containing atmosphere, ...

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Relationship between solid state parameters and melting parameters for alkali halides

Cited by 8 publications

References 11 publications

Studies on Melting of Alkali Halides

Studies on Melting of Alkali Halides

Correlation between standard enthalpy of formation, structural parameters and ionicity for alkali halides

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

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