Relationship between subsurface damage depth and breaking strength for brittle materials

Lakhdari, Fouad; Belkhir, Nabil; Bouzid, D.; Herold, Volker

doi:10.1007/s00170-018-03284-8

Cited by 16 publications

(1 citation statement)

References 33 publications

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“…随着PAP抛光的不断进行, SiC表面的划痕逐渐变浅, 直至最终被完全去除, 获得了一个无划痕、原子级平坦且具有规则原子级台阶结构的表面. 图 8 加工后4H-SiC的WLI测量结果 [40] 情况也是评价抛光效果的关键指标之一 [51,52] . 图10 分别展示了PAP技术加工后的SiC表面不同分辨率的XTEM图像 [49] .…”

Section: 等离子体改性效果评价unclassified

Plasma-assisted polishing for atomic surface fabrication of single crystal SiC

南方科技大学¹,

大阪大学²

2021

Acta Phys. Sin.

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At present, owing to the inherent limitations of the material characteristics of Si based semiconductor materials, Si based semiconductors are facing more and more challenges in meeting the performance requirements of the rapidly developing modern power electronic technologies used in semiconductor devices. As a new generation of semiconductor material, SiC has significant performance advantages, but it is difficult to process the SiC wafers with high-quality and high-efficiency in their industrial application. Reviewing the research progress of ultra-precision machining technology of SiC in recent years, we introduce plasma oxidation modification based highly efficient polishing technology of SiC in this paper. The material removal mechanism, typical device, modification process, and polishing result of this technology are analyzed. The analysis shows that the plasma oxidation modification possesses high removal efficiency and atomically flat surfaces without surface or subsurface damages. Furthermore, aiming at step-terrace structures produced during SiC surface processing with different polishing technologies, the generation mechanism and control strategy of periodic atomic layer step-terrace structures are discussed. Finally, the development and challenge of plasma-assisted polishing technology are prospected.

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Section: 等离子体改性效果评价unclassified