Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

Xie, Wen-Liang; Lv, Xian-Yi; Wang, Qiliang; Li, Liuan; Zou, Guangtian

doi:10.1088/1674-1056/ac7e35

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…Also, many kinds of methods (growth parameters modulation, dislocation filter layer, epitaxial lateral overgrowth, etc. ), have been developed to enhance the crystalline quality of diamond wafers [17,18].…”

Section: Introductionmentioning

confidence: 99%

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Mu,

Li,

et al. 2024

Electronics

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This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It demonstrates that the electric performances of PND with a single n-type diamond layer are sensitive to the doping concentration and electrode location of the n-type diamond. To further suppress the electric field crowding and obtain a better balance between breakdown voltage and on-resistance, a double-layer junction termination structure is introduced and evaluated, yielding significantly improved electronic performances. Those results provide some useful thoughts for the design of vertical diamond PND devices.

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Section: Introductionmentioning

confidence: 99%

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Mu,

Li,

et al. 2024

Electronics

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“…[10][11][12] These harmful defects typically result in significant carrier compensation and mobility degradation, inevitably leading to an increase in reverse leakage current and premature power device breakdown. [9,[13][14][15][16] Owing to the significant potential of α-Ga 2 O 3 as previously noted, various growth equation methods have been employed for heteroepitaxial growth of α-Ga 2 O 3 on sapphire substrates, including halide vapor phase epitaxy (HVPE), metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOVPE), and mist chemical vapor deposition (Mist-CVD). Among these, Mist-CVD stands out for its non-vacuum, costeffective nature in semiconductor epitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

Step-edge-guided nucleation and growth mode transition of α-Ga₂O₃ heteroepitaxy on vicinal sapphire

Hao 郝,

Zhang 张,

Zhang 张

et al. 2024

Chinese Phys. B

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Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance. In this work, the growth mode of α-Ga2O3 heteroepitaxial layers was modulated by tuning miscut angles (θ) from 0° to 7° off the (10-10) direction of sapphire (0002) substrate. On flat sapphire surfaces, the growth undergoes a typical three-dimensional (3D) growth mode due to the random nucleation on wide substrate terraces, as evidenced by the hillock morphology and high dislocation densities. As the miscut angle increases to θ=5°, the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei, and consequently, the nucleation is guided by terrace edges, which energetically facilitates the growth mode transition into the desirable two-dimensional coherent growth. Consequently, the mean surface roughness decreases to only 0.62 nm, accompanied by a significant reduction in screw and edge dislocations to 0.16×107 cm-2 and 3.58×109 cm-2, respectively. However, the further increment of miscut angles to θ=7° shrink the terrace width less than nucleation distance, and the step-bunching growth mode is dominant. In this circumstance, the misfit strain is released in the initial growth stage, resulting in surface morphology degradation and increased dislocation densities.

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“…式中, ω 0 = 1332.0 cm −1 , 为天然金刚石的一阶特征Raman峰位置, ω m 为实际得到一阶特征Raman峰位置, 计算出本文多晶金刚石的压应力σ在0.57~1.08 GPa 之间. 在800~2000 cm −1 范围内, 除了明显的金刚石特征峰, 没有观察到其他碳峰, 说明金刚石结晶质量很好 [20] . Raman测试结果说明, 我们得到的多晶金刚石材料受到压应力较小, 整体结果较为均匀, 与图1b结果一致.…”

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Influence of polycrystalline diamond on silicon-based GaN material

Liu¹,

Chen²,

Jian-Chao³

et al. 2023

Acta Phys. Sin.

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Self-heating effect has been the limited factors for the performance improvement of GaN electronics. Directly growth of polycrystalline diamond on GaN material to solve the heating problem of GaN devices becomes one of the resraech highlights. Polycrystalline diamond on Si-based GaN material has the advantages of being close to the channel region and having high heat dissipation efficiency. But there is a problem that the thermal expansion mismatch between polycrystalline diamond and GaN material leads to the electrical characteristics deterioration of GaN. In this work, we adopted microwave plasma chemical vapor deposition (MPCVD) method to grow polycrystalline diamond on 2-inch Si-based GaN material. The test results showed that polycrystalline diamond was uniform as a whole. The average thicknesses are 9~81 μm. With the thickness increase of polycrystalline diamond, the XRD (002) diffraction peak FWHM increment and mobility loss gradually increased for the Si-based GaN material. Through laser cutting and acid etching, the Si-based GaN material was successfully peeled off from the polycrystalline diamond. It was found that during the high temperature growth of diamond, hydrogen atoms had an etching effect on the defect positions of the silicon nitride epitaxial layer to form a hole region in the GaN, and the etching depth can reach the intrinsic GaN layer. During the cooling process, a crack region formed around the hole region. The Raman characteristic peaks, XRD (002) diffraction peaks FWHM, and electrical properties of the exfoliated Si-based GaN materials all returned to their intrinsic states. The above results indicated that the thermal expansion mismatch between polycrystalline diamond and Si-based GaN introduced stress to GaN, which caused the GaN lattice distortion, and leading to electrical property degradation of GaN material. The degradation of GaN material was recoverable rather than destructive.

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Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

Cited by 6 publications

References 18 publications

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Step-edge-guided nucleation and growth mode transition of α-Ga₂O₃ heteroepitaxy on vicinal sapphire

Influence of polycrystalline diamond on silicon-based GaN material

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Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

Cited by 6 publications

References 18 publications

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire

Influence of polycrystalline diamond on silicon-based GaN material

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Step-edge-guided nucleation and growth mode transition of α-Ga₂O₃ heteroepitaxy on vicinal sapphire