Relationships between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy

Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide

“…46 Recently, SiC ceramics sintered with 2 wt% AlN-RE 2 O 3 (RE = Y, Er) showed an electrical resistivity of 7.2-8.1 × 10 −4 m at room temperature, 23 which was comparable to those of the specimens in the present study, with the exception of SLu. The SiC with 2 wt% AlN-Er 2 O 3 additive showed an electrical resistivity of 8.1 × 10 −4 m at room temperature, 23 whereas the electrical resistivity of the SEr specimen, which contained 1wt% AlN-Er 2 O 3 , was 5.9 × 10 −4 m at room temperature.…”

Densification of liquid phase sintered silicon carbide

“…5) and electrical properties of the GPS and HP materials. 23 In Fig. 7, the thermodynamically calculated amounts of liquid phase, as a function of temperature, are given for different SiO 2 -contents for the LPSSiC material with the Al 2 O 3 /Y 2 O 3 ratio 5:3.…”

Enhanced electrical conductivity of silicon carbide ceramics by addition of graphene nanoplatelets

“…From the electrical conduction viewpoint, SiC is a semiconductor with fairly large band gap energies ranging from ∼2.4 to 3.4 eV, depending on the structural polytype [4,5], thus exhibiting low electrical conductivity (σ) (close to 10 −13 S m −1 [6]). However, SiC-based ceramics can be tailored to display very diverse σ values within a range from 10 −9 to 10 5 S m −1 [6][7][8][9][10][11][12][13][14], depending on the type of doping, often resulting from sintering additives. In this sense, the case of sintering additives containing nitrogen (N) is especially significant, since N atoms can be incorporated into the SiC lattice substituting for carbon (C) during sintering [15], creating a donor level within the bandgap.…”