Relative Analysis of GaAs, InSb, InP Using QWFET

Subash, T.D.; Gnanasekaran, T.; Jagannathan, J.; Divya, C.

doi:10.4028/www.scientific.net/amr.984-985.1080

Cited by 3 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in figure 6 the maxima of spectral flux of the n-type compounds studied can be sorted to highest to lowest in magnitude as InSb, InP, and GaAs. It was reported in [49] that the electron mobility and saturation velocity of InSb was greater than those of GaAs and InP, as well. Together with its high spectral flux value, InSb can be a candidate as a n-TPV system component.…”

Section: Resultsmentioning

confidence: 91%

Tunable near-field radiative transfer by III–V group compound semiconductors

Elçioğlu

Didari

Ozyurt

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Near-field radiative transfer (NFRT) refers to the energy transfer mechanism which takes place between media separated by distances comparable to or much smaller than the dominant wavelength of emission. NFRT is due to the contribution of evanescent waves and coherent nature of the energy transfer within nano-gaps, and can exceed Planck's blackbody limit. As researchers further investigate this phenomenon and start fabrication of custom-made platforms, advances in utilization of NFRT in energy harvesting applications move forward day by day. In designing and manufacturing such harvesting devices, chemical and physical properties of surfaces and wafers are important for development of effective solutions. In this work, we compare several III-V group compound semiconductor wafers (mainly GaAs, InSb, and InP) from fabrication point of view, in order to explore their possible use in future devices. The results presented here show that the type of dopant, wafer temperature, and gap size are very important factors as they affect the NFRT rates. GaAs, InSb, and InP wafers significantly enhance the near-field fluxes beyond the blackbody rates, and n-type InSb yields to the highest enhancement. For GaAs, p-type yielded a higher radiative flux compared to n-type GaAs, as oppose to n-type InSb outperforming its p-type and undoped counterparts. Furthermore, the possible use of n-InSb as the TPV cell at 550 K is discussed for effective energy harvesting. These findings can be useful for determination of the proper material type for emitting and non-emitting NFRT-based energy harvesting devices.

show abstract

Section: Resultsmentioning

confidence: 91%

Tunable near-field radiative transfer by III–V group compound semiconductors

Elçioğlu

Didari

Ozyurt

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Over which InSb QDs were made to load by direct absorption, followed by drying with N 2 gas pursing for 5 minutes. [43][44][45][46][47][48][49] 2.3.3 Counter electrode. Initially FTO glass slides were well cleaned and were immersed in isopropanol and sonicated for 30 min and washed with double distilled water and ethanol.…”

Section: Fabrication Of Qdsscmentioning

confidence: 99%

“…The band gap for InSb QDs seems to be widened from 0.17 eV to 1.01 eV because of the quantum connement effect. 44 Optical absorption of InSb QDs shi towards near-infrared thereby signicantly enhance current density by reducing UV absorption loss which occurs during light absorption and thus favouring conduction process under light illumination. [12][13][14]23,31,42 3.4 Photoanode characterization 3.4.1 Structural and morphological analysis of TiO 2 /CdS/ InSb photoanodes.…”

Section: Xps Analysismentioning

confidence: 99%

Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

et al. 2020

View full text Add to dashboard Cite

show abstract

Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region

Cui,

Huo,

Qiu

et al. 2024

Nanophotonics

View full text Add to dashboard Cite

Gallium arsenide (GaAs) semiconductor wires have emerged as potent candidates for nonlinear optical devices, necessitating bandgap engineering for an expanded operational wavelength range. We report the successful growth of strain-mediated GaAs microwires (MWs) with an average diameter of 1.1 μm. The axial tensile strain in these wires, as measured by X-ray diffraction and Raman scattering, ranges from 1.61 % to 1.95 % and from 1.44 % to 2.03 %, respectively. This strain condition significantly reduces the bandgap of GaAs MWs compared to bulk GaAs, enabling a response wavelength extension up to 1.1 μm. Open aperture Z-scan measurements reveal a nonlinear absorption coefficient of −15.9 cm/MW and a third-order magnetic susceptibility of −2.8 × 10−8 esu at 800 nm for these MWs. I-scan measurements further show that the GaAs saturable absorber has a modulation depth of 7.9 % and a nonsaturation loss of 3.3 % at 1050 nm. In laser applications, GaAs MWs have been effectively used as saturable absorbers for achieving Q-switched and dual-wavelength synchronous mode-locking operations in Yb-bulk lasers. These results not only offer new insights into the use of large diameter semiconductor wires but also expand the potential for applications requiring bandgap tuning.

show abstract

Relative Analysis of GaAs, InSb, InP Using QWFET

Cited by 3 publications

References 14 publications

Tunable near-field radiative transfer by III–V group compound semiconductors

Tunable near-field radiative transfer by III–V group compound semiconductors

Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region

Contact Info

Product

Resources

About