Relative Raman intensities of the folded modes in SiC polytypes

Nakashima, Satoru; Katahama, Hisashi; Nakakura, Y.; Mitsuishi, Akiyoshi

doi:10.1103/physrevb.33.5721

Cited by 89 publications

(33 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The narrow peaks pattern of crystalline polytypes is obvious and assignments are univocal with the comprehensive work of Nakashima (Nakashima et al, 1986;idem, 1987;Nakashima &Harima, 1997), see Fig. 6.…”

mentioning

confidence: 76%

“…The Raman spectrum of well crystallised SiC phases is observed between 600 and 1000 cm -1 (Feldman et al, 1968;Nakashima et al, 1986;idem, 1987;idem, 2000;Nakashima & Hangyo, 1991;Nakashima & Harima, 1997;Okimura et al, 1987;Tomita et al, 2000;Hundhausen et al, 2008,). The main Raman peaks centred at 795 and 966 cm -1 correspond to the transverse (TO) and longitudinal (LO) optic modes respectively of the (polar) cubic 3C phase, also called β SiC.…”

mentioning

confidence: 99%

See 1 more Smart Citation

SiC, from Amorphous to Nanosized Materials, the Exemple of SiC Fibres Issued of Polymer Precursors

Colomban¹

2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

View full text Add to dashboard Cite

mentioning

confidence: 76%

mentioning

confidence: 99%

SiC, from Amorphous to Nanosized Materials, the Exemple of SiC Fibres Issued of Polymer Precursors

Colomban¹

2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

View full text Add to dashboard Cite

“…A theoretical method based on bond polarizability is adopted to calculate the Raman intensity profiles of the folded modes of silicon carbide [132]. The relative Raman intensity of the folded modes is calculated using bond Raman polarizability together with the eigenvectors of the linear-chain model.…”

Section: Lattice Vibration and Infrared/raman Spectramentioning

confidence: 99%

General Properties of Bulk SiC

Fan

Chu

2014

Engineering Materials and Processes

View full text Add to dashboard Cite

The fabrication and properties of silicon carbide crystals have been extensively studied because as a wide bandgap semiconductor, silicon carbide is ideal for electronic applications requiring high temperature, high frequency, and high power. The electrical and electronic properties as well as device applications of bulk silicon carbide have been reviewed [1][2][3]. In this chapter, which provides a self-contained framework to facilitate the understanding of the properties of silicon carbide nanostructures, the basic properties of silicon carbide crystals are reviewed.

show abstract

“…Unlike the other materials in Table 1, the Raman spectra of individual SiC grains showed significant variations in the structures and relative intensities of the main bands. These variations are well known to be mainly due to polymorphism in SiC (Nakashima et al 1986). In seeking a match between the spectra of captured SiC particles and raw SiC grains, it was therefore necessary to select from several raw grain spectra.…”

Section: Mineral Categorizationmentioning

confidence: 99%

Identification of minerals and meteoritic materials via Raman techniques after capture in hypervelocity impacts on aerogel

Burchell

Mann

Creighton

et al. 2006

Meteorit & Planetary Scien

View full text Add to dashboard Cite

Abstract-Mineral particles analogous to components of cosmic dust were tested to determine if their Raman signatures can be recognized after hypervelocity capture in aerogel. The mineral particles were accelerated onto the silica aerogel by light-gas-gun shots. It was found that all the individual minerals captured in aerogel could be identified using Raman (or fluorescence) spectra. The laser beam spot size was ∼5 micrometers, and in some cases the captured particles were of a similar small size. In some samples fired into aerogel, a broadening and a shift in the wave numbers of some of the Raman bands was observed, a result of the trapped particles being at elevated temperatures due to laser heating. Temperatures of samples were also estimated from the relative intensities of Stokes and anti-Stokes Raman bands, or, in the case of corundum particles, from the wave number of fluorescence bands excited by the laser. The temperature varied greatly, dependent upon laser power and the nature of the particle. Most of the mineral particles examined had temperatures below 200 °C at a laser power of about 3 mW at the sample. This temperature is sufficiently low enough not to damage most materials expected to be found captured in aerogel in space. In the worst case, some particles were shown to have temperatures of 500-700 °C. In addition, selected meteorite samples were examined to obtain Raman signatures of their constituent minerals and were then shot into aerogel. It was possible to find Raman signatures after capture in aerogel and obtain a Raman map of a whole grain in situ in the aerogel. It is concluded that Raman analysis is indeed well suited for an in situ analysis of micrometer-sized materials captured in aerogel.

show abstract

Relative Raman intensities of the folded modes in SiC polytypes

Cited by 89 publications

References 10 publications

SiC, from Amorphous to Nanosized Materials, the Exemple of SiC Fibres Issued of Polymer Precursors

SiC, from Amorphous to Nanosized Materials, the Exemple of SiC Fibres Issued of Polymer Precursors

General Properties of Bulk SiC

Identification of minerals and meteoritic materials via Raman techniques after capture in hypervelocity impacts on aerogel

Contact Info

Product

Resources

About