Relaxable Damage in Hot‐Carrier Stressing of n‐MOS Transistors

Abstract

A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing ofn-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress conditionVg=Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant atVg=–Vd. These effects are discussed and explained by the evolution of the interface states.