Relaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon

Abstract

on the occasion of his80th birthdayRelaxation of the current flowing through an oxide thermally grown on polycrystalline silicon is studied in the spread time region to lo3 s) and for the structures of the different area size (8 x 1 0 -8 t o cm2). It is shown that the current relaxation curves cannot be approximated by the simple power law jt -n , with n < 1, as generally accepted, but having a complicated form with parts of constant current level and parts of current relaxation with the hyperbolic law jl / t A strong dependence of the form of the relaxation curves on the area size of the structure is observed. A model explaining the results by summing up the local currents is proposed. The area from which the current flows in the initial part of the relaxation curve is estimated.