Relaxor properties of Fe-doped TlInS2

Sardarly, R. M.; Самедов, О. А.; Sadykhov, I. Sh.; Aliev, V. A.

doi:10.1134/1.1583800

Cited by 5 publications

(4 citation statements)

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“…Summarizing, we see that despite some discrepancies in the number of observed anomalies and in their positions in the temperature scale, the majority of the investigators agree that there are four anomalies in the temperature dependence of the various physical properties of TlInS 2 near the temperatures of 79,170,[194][195][196][197] In addition, we would like to mention very interesting recent works of Sardarly et al [209][210][211][212][213][214][215][216] who doped TlInS 2 crystals with ∼0.1 at.% Cr, Mn, Yb, Sm, Bi, Fe, Ge or La. The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals.…”

Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 79%

“…The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals. The most interesting effect [209][210][211][212][213][214] is that the layered semiconductor ferroelectric TlInS 2 , doped with Fe, Mn, Cr and Ge, exhibits a pronounced relaxor behavior that is accompanied by the occurrence of polar nano-regions (PNRs), or nanodomains. For example, doping of the TlInS 2 crystals with Ge yields a change in the temperature dependence of dielectric susceptibility: instead of the peak corresponding to the phase transition at 196 K, two broad peaks occur; here, the low temperature peak at 142 K corresponds to the transition from the relaxor (nanodomain) state to the ferroelectric state.…”

Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 99%

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Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

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We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I–V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor–metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.

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Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 79%

Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 99%

Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

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“…The effect of impurities on ferroelectric phase transition (FPT) in monoclinic (M)-TlInS 2 was studied earlier and a low temperature shift and a broadening of the dielectric anomaly were observed for impurities such as Mn, Fe, and Cr. 1,2) At the same time, a high-temperature shift of dielectric anomaly (DA) was reported for some impurities studied in similar works. 1,2) According to the Landau-Ginzburg theory, [3][4][5] however, the contribution of electrons (holes) of ionized donors (acceptors) to the total free energy can lead only to a low-temperature shift of FPT.…”

mentioning

confidence: 79%

“…1,2) At the same time, a high-temperature shift of dielectric anomaly (DA) was reported for some impurities studied in similar works. 1,2) According to the Landau-Ginzburg theory, [3][4][5] however, the contribution of electrons (holes) of ionized donors (acceptors) to the total free energy can lead only to a low-temperature shift of FPT.…”

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confidence: 79%

Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS₂ Doped with Different Impurities

Alekperov¹,

Nadjafov²

2011

Jpn. J. Appl. Phys.

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The low-frequency dielectric function and conductivity at ferroelectric phase transition have been analyzed in monoclinic TlInS2 crystals doped with different impurities. Complementary, room-temperature optical absorption and photoconductivity have been examined to identify shallow and deep energy levels caused by the introduced impurities. It is found that only shallow impurities broaden and shift dielectric anomaly towards lower temperatures. Contrary to our expectation, the dark conductivity at the temperature of the dielectric anomaly is maximum rather than minimum. The dielectric breakdown of the shallow impurities is proposed to be responsible for the observed behavior of the dark conductivity in monoclinic TlInS2.

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Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS₂

Sardarly¹,

Mamedov

Wakita

et al. 2006

Physica Status Solidi (a)

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Temperature-dependent dielectric and conduction properties of the impurity-doped and gamma-irradiated samples of TlInS 2 semiconductor-ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature provided that the central ion in InS 4 tetrahedron is replaced by an impurity atom such as Mn or Cr, or radiation dose exceeds 400 Mrad. Same as NMR-studies, the present work drives to a conclusion that In-displacements are among the components of the order parameter of the incommensurate phase transition. The origin of the non-activated conductivity observed in the relaxor state of TlInS 2 is assumed to be resonance tunneling executed by charge carriers from electron levels in the band gap through potential barriers created by incommensurate superstructure.

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Relaxor properties of Fe-doped TlInS2

Cited by 5 publications

References 1 publication

Electronic properties and phase transitions in low-dimensional semiconductors

Electronic properties and phase transitions in low-dimensional semiconductors

Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS₂ Doped with Different Impurities

Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS₂

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Relaxor properties of Fe-doped TlInS2

Cited by 5 publications

References 1 publication

Electronic properties and phase transitions in low-dimensional semiconductors

Electronic properties and phase transitions in low-dimensional semiconductors

Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS2 Doped with Different Impurities

Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS2

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Product

Resources

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Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS₂ Doped with Different Impurities

Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS₂