Relaxor Properties of TlInS₂⟨Mn⟩ Composites with Nanodomain State

Electronic properties and phase transitions in low-dimensional semiconductors

“…Summarizing, we see that despite some discrepancies in the number of observed anomalies and in their positions in the temperature scale, the majority of the investigators agree that there are four anomalies in the temperature dependence of the various physical properties of TlInS 2 near the temperatures of 79,170,[194][195][196][197] In addition, we would like to mention very interesting recent works of Sardarly et al [209][210][211][212][213][214][215][216] who doped TlInS 2 crystals with ∼0.1 at.% Cr, Mn, Yb, Sm, Bi, Fe, Ge or La. The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals.…”

“…The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals. The most interesting effect [209][210][211][212][213][214] is that the layered semiconductor ferroelectric TlInS 2 , doped with Fe, Mn, Cr and Ge, exhibits a pronounced relaxor behavior that is accompanied by the occurrence of polar nano-regions (PNRs), or nanodomains. For example, doping of the TlInS 2 crystals with Ge yields a change in the temperature dependence of dielectric susceptibility: instead of the peak corresponding to the phase transition at 196 K, two broad peaks occur; here, the low temperature peak at 142 K corresponds to the transition from the relaxor (nanodomain) state to the ferroelectric state.…”