Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Dimastrodonato, V.; Mereni, L.; Young, Robert J.; Pelucchi, E.

doi:10.1016/j.jcrysgro.2010.09.011

Cited by 7 publications

(8 citation statements)

References 33 publications

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“…The samples used in this study were grown by MOVPE at low pressure (80 millibars) in a commercial horizontal reactor with purified N 2 [9], or a mixture of N 2 and H 2 [10], used as carrier gases. The precursors were trimethylindium (TMIn), trimethylaluminium (TMAl), trimethylgallium (TMGa), triethylgallium (TEGa), trimethylantimony (TMSb), diethylzinc (DEZn), arsine (AsH 3 ), phosphine (PH 3 ) and disilane (H 6 Si 2 ).…”

Section: Methodsmentioning

confidence: 99%

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

Gocalinska¹,

Pescaglini²,

Secco³

et al. 2020

J. Phys. Photonics

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We report on the growth and electronic properties of polycrystalline III-V semiconductors, which to date have not been discussed in depth in the literature. III-V polycrystalline semiconductor thin films were grown by metalorganic vapour phase epitaxy in the temperature range 410°C-475°C, which is compatible for integration into the Back-End-Of-Line (BEOL) silicon based integrated circuits. The thickness of the films in this study is in the range of tens to a few hundreds of nanometers, and deposited on amorphous substrates (either smart-phone-grade glass or Si/SiO 2 ) and, also, on oxidised GaAs epi-ready wafers. Extensive AFM, SEM and TEM analyses show interlinked-to-continuous polycrystalline III-V films based on In(Al)As or GaSb. Hall-van der Pauw measurements return results of high mobility and controllable charge density for n-and p-type field effect transistors. In the GaAs/In(Al)As system, electron density ranging from 1×10 16 to 1×10 19 cm −3 (n) was achieved, with room temperature mobility values in the range of 100-150 cm 2 V −1 s −1 and hole mobility values in the range of 1-10 cm 2 V −1 s −1 have been measured in Zn doped samples. Polycrystalline GaSb films demonstrated p-type behaviour (1×10 17 cm −3 ) with remarkably high room temperature hole mobility values up to 66 cm 2 V −1 s −1 for the films grown on Si/SiO 2 substrate (and 300 cm 2 V −1 s −1 for the GaAs substrate where an epitaxial process is actually in place). Materials could be stacked into heterostructures, providing a promising platform for complex devices enabling compatible n-and phetero-layers for 3D integration formed at temperatures 480°C.

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Section: Methodsmentioning

confidence: 99%

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

Gocalinska¹,

Pescaglini²,

Secco³

et al. 2020

J. Phys. Photonics

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“…29 300-nm-thick single layers of InP were grown on perfectly oriented or slightly misoriented InP(001) substrates, which in most cases were semi-insulating Fe-doped, with reference samples grown on Zn-(p-type) and Si-doped (n-type) wafers (we anticipate no observed differences to result from the substrate doping, as no diffusion to the epitaxial layer is expected). The majority of the InP layers were grown as nominally undoped.…”

Section: Methodsmentioning

confidence: 99%

“…All samples in this study were grown by MOVPE at low pressure (80 mbar) in a commercial horizontal reactor with purified N 2 as the carrier gas and trimethylindium (TMIn) and phosphine (PH 3 ) as precursors. 29 300-nmthick single layers of InP were grown on perfectly oriented or slightly misoriented InP(001) substrates, which in most cases were semi-insulating Fe-doped, with reference samples grown on Zn-(p-type) and Si-doped (ntype) wafers (we anticipate no observed differences to result from the substrate doping, as no diffusion to the epitaxial layer is expected). The majority of the InP layers were grown as nominally undoped.…”

Section: Methodsmentioning

confidence: 99%

Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

et al. 2012

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We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vaporphase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle <0.6 • and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These observations suggest a window of growth parameters for optimal quality epitaxial layers. We also present a theoretical model for these growth modes that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for step flow and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges, as was discussed previously for GaAs (001).

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“…Pyramidal QDs were grown by low pressure MOVPE, with nitrogen as carrier gas [ 14 , 15 ]. The standard MOVPE precursors, namely trimethyl(-gallium, -indium, -aluminium), dimethylhydrazine (U-DMHy) and arsine (AsH 3 ), were used.…”

Section: Methodsmentioning

confidence: 99%

A study of nitrogen incorporation in pyramidal site-controlled quantum dots

et al. 2011

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We present the results of a study of nitrogen incorporation in metalorganic-vapour-phase epitaxy-grown site-controlled quantum dots (QDs). We report for the first time on a significant incorporation (approximately 0.3%), producing a noteworthy red shift (at least 50 meV) in some of our samples. Depending on the level of nitrogen incorporation/exposure, strong modifications of the optical features are found (variable distribution of the emission homogeneity, fine-structure splitting, few-particle effects). We discuss our results, especially in relation to a specific reproducible sample which has noticeable features: the usual pattern of the excitonic transitions is altered and the fine-structure splitting is suppressed to vanishing values. Distinctively, nitrogen incorporation can be achieved without detriment to the optical quality, as confirmed by narrow linewidths and photon correlation spectroscopy.

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Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Abstract: We report in this work on the spectral purity of pyramidal site-controlled

Cited by 7 publications

References 33 publications

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

A study of nitrogen incorporation in pyramidal site-controlled quantum dots

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