Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei, Shengsheng; Bai, Jiao; Xie, Weiwei; Su, Yan; Qin, Fuwen; Wang, Dejun

doi:10.1021/acsami.3c00995

Cited by 5 publications

(3 citation statements)

References 49 publications

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“…In accordance with the experimental results in figure 5, the sample with a high-k insulating layer, i.e., the Al/ZrO 2 /Si/Al (SiC MOS) structure, had the larger breakdown voltage of 25.9V relative to that of the Al/ZrO 2 /SiC/Al (Si MOS) structure, with a leakage current of 1 × 10 −8 A/cm under a zero gate voltage. Although the ZrO 2 /SiC MOS structure achieves relatively high breakdown voltages (V B = 23V) [26][27][28], the application of ZrO 2 as a High-k material on its own as a gate oxygen layer is somewhat unsatisfactory when compared to the performance of conventional SiO 2 applications on Si as well as SiC substrates [29]. This may be due to the low valence band offset of ZrO 2 (ΔE V = 0.52 eV) [8,30].…”

Section: Resultsmentioning

confidence: 99%

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Wang,

Zeng,

Zhang

et al. 2024

Mater. Res. Express

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Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO2 as the gate oxygen layer with a high-k material (ZrO2) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrOx components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 1012 eV-1 cm-2. The movable charge Neffof the oxide layer was also controlled at 1012 cm-2. Therefore, the overall performance of the ZrO2/SiC structure in terms of electrical properties exceeds that of the ZrO2/Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO2) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

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Section: Resultsmentioning

confidence: 99%

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Wang,

Zeng,

Zhang

et al. 2024

Mater. Res. Express

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“…It is worth noting that no plasma source plasma source was used in preparing epitaxial SiON/SiC, consistent with the harmful plasma effects found for the crystallinity of GaN interfaces (figure 18). On the other hand, a plasma sources enables use of lower temperatures [346]. A thickness of the epitaxial SiON layer is 0.6 nm approximately, which provides a very potential tunneling barrier, for example, the photodetectors based on Schottky contacts (section 4.5).…”

Section: Is It Possible To Avoid High-temperature Degradation Of Sic ...mentioning

confidence: 99%

Bridging the gap between surface physics and photonics

Laukkanen,

Punkkinen,

Kuzmin

et al. 2024

Rep. Prog. Phys.

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Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunnelling barrier are an emergent solution to control electrical losses in photonic devices.

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“…In the field of energy conversion, particularly within solar photovoltaics, nuclear power generation, and high-temperature coal-fired power plants, SiC materials demonstrate immense application potential. ,,− The high-temperature thermal resistance and chemical stability of SiC make it the preferred material for manufacturing key components in solar photovoltaic systems, such as SiC-based semiconductor devices in photovoltaic inverters, which can operate stably at high temperatures, enhancing system efficiency and reliability. In the domain of nuclear power generation, SiC is considered an ideal candidate for nuclear fuel cladding materials due to its excellent radiation tolerance and chemical stability, potentially improving the safety and economy of reactors. , Furthermore, the application of SiC in high-temperature coal-fired power stations, for instance, as a material for burners, allows it to withstand extreme thermal stress and corrosive environments, optimizing combustion efficiency and reducing harmful emissions.…”

Section: Application Of Sic In Acidic and Alkaline Environmentsmentioning

confidence: 99%

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Chen,

Zhang,

Zhao

et al. 2024

Langmuir

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Silicon carbide, as a third-generation semiconductor material, plays a pivotal role in various advanced technological applications. Its exceptional stability under extreme conditions has garnered a significant amount of attention. These superior characteristics make silicon carbide an ideal candidate material for high-frequency, high-power electronic devices and applications in harsh environments. In particular, corrosion resistance in natural or artificially acidic and alkaline environments limits the practical application of many other materials. In fields such as chemical engineering, energy conversion, and environmental engineering, materials often face severe chemical erosion, necessitating materials with excellent chemical stability as foundational materials, carriers, or reaction media. Silicon carbide exhibits outstanding performance under these conditions, demonstrating significant resistance to corrosive substances such as hydrochloric acid, sulfuric acid, nitric acid, and alkaline substances such as potassium hydroxide and sodium hydroxide. Despite the well-known chemical stability of silicon carbide, the stability conditions of its different types (such as 3C-, 4H-, and 6H-SiC polycrystals) in acidic and alkaline environments, as well as the specific corrosion mechanisms and differences, warrant further investigation. This Review not only delves deeply into the detailed studies related to this topic but also highlights the current applications of different silicon carbide polycrystals in chemical reaction systems, energy conversion equipment, and recycling processes. Through a comprehensive analysis, this Review aims to bridge research gaps, offering a comparative analysis of the advantages and disadvantages between different polymorphs. It provides material scientists, engineers, and developers with a thorough understanding of silicon carbide's behavior in various chemical environments. This work will propel the research and development of silicon carbide materials under extreme conditions, especially in areas where chemical stability is crucial for device performance and durability. It lays a solid foundation for ultra-high-power, high-integration, high-reliability module architectures, supercomputing chips, and highly safe long-life batteries.

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Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Cited by 5 publications

References 49 publications

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Bridging the gap between surface physics and photonics

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

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Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Cited by 5 publications

References 49 publications

Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Bridging the gap between surface physics and photonics

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

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Product

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Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates